Technology of manufacturing the reliable silicon photoconverters with long operation time

Abstract

We offer to use an amorphous metal alloy Al 80 Ni 20 as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive structures and film coatings with an amorphous structure are described. The data of the X-ray structure analysis of the metal alloy Al 80 Ni 20 confirming amorphism were obtained. The key PC parameters are determined.