Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Aleshkin, V. Ya.; Baidus, N. V.; Dubinov, A. A.; Kudryavtsev, K. E.; Nekorkin, S. M.; Новиков, А. В.; Rykov, A. V.; Samartsev, I. V.; Fefelov, A. G.; Yurasov, D. V.; Krasilnik, Z. F.

doi:10.1134/s1063782617110057

Cited by 4 publications

(3 citation statements)

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“…This allows for its electrical and optical properties to be easily tuned as a function of composition . AlGaAs is commonly utilized in nanoelectronics, including heterojunction bipolar transistors and high electron mobility transistors. , Additionally, AlGaAs is regularly used in photonic and optoelectronic devices, such as light-emitting diodes (LEDs), , lasers, , distributed Bragg reflectors (DBRs), , and tandem-junction solar cells. , Despite its usefulness as a tunable and functional ternary alloy semiconductor, AlGaAs processing poses a multitude of challenges, particularly for the fabrication of micro- and nano-structures. Dry etching is capable of accurately generating high-aspect-ratio features, though ion bombardment can be particularly detrimental to the electrical and optical properties of semiconductor nanostructures with high surface-to-bulk-state ratios .…”

Section: Introductionmentioning

confidence: 99%

“…41 AlGaAs is commonly utilized in nanoelectronics, including heterojunction bipolar transistors and high electron mobility transistors. 42,43 Additionally, AlGaAs is regularly used in photonic and optoelectronic devices, such as light-emitting diodes (LEDs), 44,45 lasers, 46,47 distributed Bragg reflectors (DBRs), 48,49 and tandem-junction solar cells. 50,51 Despite its usefulness as a tunable and functional ternary alloy semiconductor, AlGaAs processing poses a multitude of challenges, particularly for the fabrication of micro-and nano-structures.…”

Section: Introductionmentioning

confidence: 99%

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Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

Wilhelm

Wang

Baboli

et al. 2018

ACS Appl. Mater. Interfaces

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The ternary III-V semiconductor compound, Al GaAs, is an important material that serves a central role within a variety of nanoelectronic, optoelectronic, and photovoltaic devices. With all of its uses, the material itself poses a host of fabrication difficulties stemming from conventional top-down processing, including standard wet-chemical etching and reactive-ion etching (RIE). Metal-assisted chemical etching (MacEtch) techniques provide low-cost and benchtop methods that combine many of the advantages of RIE and wet-chemical etching, without being hindered by many of their disadvantages. Here, inverse-progression MacEtch (I-MacEtch) of Au-patterned Al GaAs is demonstrated for the first time and is exploited for the generation of vertical and ordered nanopillar arrays. The etching solution employed here consists of citric acid (CHO) and hydrogen peroxide (HO). The I-MacEtch evolution is tracked in time for Al GaAs samples with compositions defined by x = 0.55, x = 0.60, and x = 0.70. The vertical and lateral etch rates (VER and LER, respectively) are shown to be tunable with Al fraction and temperature of the etching solution, based on modification of catalytically injected hole distributions. Control over the VER/LER ratio is demonstrated by tailoring etch conditions for single-step fabrication of ordered AlGaAs nanopillar arrays with predefined aspect ratios. Maximum VER and LER values of ∼40 nm/min and ∼105 nm/min, respectively, are measured for AlGaAs at a process temperature of 65 °C. The I-MacEtch nanofabrication methodology outlined in this study may be utilized for the processing of many devices, including high electron mobility transistors, distributed Bragg reflectors, lasers, light-emitting diodes, and multijunction solar cells containing AlGaAs components.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

Wilhelm

Wang

Baboli

et al. 2018

ACS Appl. Mater. Interfaces

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“…The structure F created on the basis of the structure D, differing only by the additional doping of the Al 0.3 Ga 0.7 As cladding layers (needed to create a p-n junction), was used to fabricate a strip laser diode [23]. A 1 mm long and a 15 µm wide laser diode emitted light in the wavelength range of 1.1 µm with a threshold current density of 20 kA/cm 2 under electrical pumping (pulse duration of 0.36 µs and repetition rate of 1470 Hz) at room temperature ( Figure 7).…”

Section: Growth Of a 3 B 5 Laser Structures On Ge/si Substrates With mentioning

confidence: 99%

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

et al. 2018

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The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type designed for the operation under the electrical pumping. Influence of the Si substrate offcut from the [001] direction, thickness of a Ge buffer and insertion of the AlAs/GaAs superlattice between Ge and GaAs on the structural and optical properties of fabricated samples was studied. The measured threshold current densities at room temperatures were 5.5 kA/cm2 and 20 kA/cm2 for lasers operating at 0.99 μm and 1.11 μm respectively. In order to obtain the stimulated emission at wavelengths longer than 1.1 μm, the InGaAs quantum well laser structures with high In content and GaAsP strain-compensating layers were grown both on Ge/Si and GaAs substrates. Structures grown on GaAs exhibited stimulated emission under optical pumping at the wavelengths of up to 1.24 μm at 300 K while those grown on Ge/Si substrates emitted at shorter wavelengths of up to 1.1 μm and only at 77 K. The main reasons for such performance worsening and also some approaches to overcome them are discussed. The obtained results have shown that monolithic integration of direct-gap A3B5 compounds on Si using MOCVD technology is rather promising approach for obtaining the Si-compatible on-chip effective light source.

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

et al. 2018

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Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Cited by 4 publications

References 10 publications

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

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Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Cited by 4 publications

References 10 publications

Ordered AlxGa1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

Ordered AlxGa1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

MOCVD Growth of InGaAs/GaAs/AlGaAs Laser Structures with Quantum Wells on Ge/Si Substrates

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

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Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching