TEM characterization of ALD layers in deep trenches using a dedicated FIB lamellae preparation method

Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3 extracted from their impact on film conformality

“…As recently reviewed by Cremers et al, 11 several high AR structures have been used in the literature to assess the conformality of ALD processes, such as vertical trenches, [16][17][18][19] pillars, [20][21][22][23] and porous materials. 24,25 Alternatively, lateral structures can be employed 6,7,26,27 which allow for top-view diagnostics to easily and accurately quantify the conformality and properties of the deposited film.…”

Effect of Polymer Microstructure on the Nucleation Behavior of Alumina via Atomic Layer Deposition

“…Atomic layer deposition (ALD) is a thin film deposition technique in which nanoscale inorganic coatings are formed by sequential, self-limiting surface reactions using gas phase organometallic precursors. , Historically, ALD has been widely used by the microelectronics industry to deposit high-κ dielectric thin films in the construction of transistors. − The self-limiting nature of the reaction results in subatomic control of the inorganic coating thickness on both planar and complex surfaces. , In recent years, ALD has been observed as a means of introducing inorganic material properties to flexible polymer substrates by direct reaction of the ALD precursors with the polymer functional groups. , …”

“…3−5 The self-limiting nature of the reaction results in subatomic control of the inorganic coating thickness on both planar and complex surfaces. 6,7 In recent years, ALD has been observed as a means of introducing inorganic material properties to flexible polymer substrates by direct reaction of the ALD precursors with the polymer functional groups. 8,9 ALD on polymers has demonstrated that the polymer microstructure can influence the morphology of the resultant inorganic coating.…”

The Trends of In Situ Focused Ion Beam Technology: Toward Preparing Transmission Electron Microscopy Lamella and Devices at the Atomic Scale

“…proposed a tilting sample preparation method, which ensures the uniformity of long channel sample preparation. [ 95,96 ] The specific steps are as follows: Pt (protected metal) is deposited on the horizontal and vertical surfaces to keep the groove away from damage by the ion beam (Figure 7e). Additionally, to control the integrity of the trench structure profile and maintain that the target in the sample is uniformly thin, the target ought to be located in the first row because the ion beam focusing capability is the best at the top of the sample.…”