Temperature acceleration of time-dependent dielectric breakdown

Dielectric breakdown I: A review of oxide breakdown

“…After the injection holes are transported through the oxide, although at a much lower speed compared with electrons. Part of them are also trapped in the oxide at the Si-SiO2 interface where they may stimulate the electron injection [12]. Another possibility is the removal of an electron from Si-H or SiO-H bonds leading to the liberation of hydrogen.…”

“…Nevertheless, model descriptions have been given [11][12][13] in terms of acceleration factors for temperature and electric field during tests. Of course, the model parameters are translated into physical quantities if possible.…”

VLSI Reliability in Europe

“…Professor Chenming Hu and coworkers at Berkeley have done a good job on this derating for the estimation of oxide reliability (see [13] and its references). They were able to give a consistent description of the experiments of their own as well as of others in terms of a limited number of parameters.…”

Temperature-Aware Design and Management for 3D Multi-Core Architectures

“…This is also referred in literature as gate oxide breakdown. TDDB has an exponential dependency on temperature [28] that accelerates the failure of a transistor by breaking down the dielectric, hence forming a constant conducting path. As a consequence, the faulty transistor would be permanently in a conducting state.…”

“…Consequently, hot-carrier injection would lead to thermal run-away. [28,29] in high-k device dielectric and low-k interconnect dielectric. This is modeled as trap generated that leads to a leakage path through the oxide layer of the transistor.…”