Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ &amp;lt; 1.17 μm) quantum-well lasers

Tansu, Nelson; Chang, Ying‐Lan; Takeuchi, Tatsuya; Bour, D. P.; Corzine, S.; Tan, M.R.T.; Mawst, Luke J.

doi:10.1109/jqe.2002.1005415

Cited by 54 publications

(58 citation statements)

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“…A strong decrease in differential quantum efficiency, and hence low T 1 value, has previously been explained by an increase in leakage current to the p-cladding region. 13 Indeed, when compared with other devices operating at similar wavelengths 14 ͑for which T 1 ϳ 1000 K around RT͒, we find T 1 to be somewhat low, ϳ84 K for T Ͻ 100 K reducing to ϳ32 K for T Ͼ 100 K, as shown in Fig. 2.…”

Section: Materials Sciences Center and Department Of Physicssupporting

confidence: 51%

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings

Adams

Sweeney

et al. 2008

Applied Physics Letters

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We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/ cm 2 at 80 K ͑ = 890 nm͒. Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2975845͔The dominance of silicon ͑Si͒ for electronic and microelectronic circuit applications has lead to the search for monolithic optoelectronic integrated circuits ͑OEICs͒ on Si substrates. One of the key components of OEICs is a laser material for efficient light emission. However, the indirect band gap of Si has meant efficient light emission and gain have been difficult to achieve. Several strategies for producing lasers on silicon have been proposed, such as the "hybrid" laser, 1 whereby an InP-based active region is wafer fused onto a silicon/silica based waveguide or utilizing the Raman effect with external optical pumping. 2 However monolithic growth on a silicon substrate coupled with electrical injection has remained challenging. Growth of conventional direct III-V compound semiconductors directly onto Si is very difficult due to the formation of threading dislocations as a result of the large lattice mismatch. However, it has been shown that GaP can be grown without dislocations on Si due to the relatively small difference in lattice constant ͓Ͻ0.4% at room temperature ͑RT͔͒. 3 GaP is itself an indirect band gap semiconductor, but a GaNAsP alloy with high As fractions and dilute N fractions ͑of ϳ4%͒ can form a direct band gap material approximately lattice matched to GaP and Si. 4 Hence the realization of a GaP-based direct band gap semiconductor laser material on a silicon substrate can provide a realistic route toward monolithic laser sources for silicon-based OEICs. This is also another example of the potential for dilute nitride based materials in optoelectronic components.In this letter, we investigate the properties of GaNAsP lasers grown on GaP substrates. Using high pressure and low temperature techniques we have probed the extent to which a two level band anticrossing ͑BAC͒ ͑Ref. 5͒ model may be used to describe this material and have investigated the degree to which different carrier recombination processes govern laser behavior.The samples studied were grown by metal organic vapor phase epitaxy ͑MOVPE͒ on a GaP substrate. They consist of a single 6 nm GaN 0.04 As 0.8 P 0.16 2.5% compressively strained quantum well ͑SQW͒ within two undoped 150 nm GaP barrier/separate confinement layers. Optical confinement is provided by...

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Section: Materials Sciences Center and Department Of Physicssupporting

confidence: 51%

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings

Adams

Sweeney

et al. 2008

Applied Physics Letters

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“…There have been several experimental results that have demonstrated low temperature sensitive InGaAs and InGaAsN QW lasers in the wavelength regime of 1.17-1.3 m [2]- [11]. Although high values for the characteristic temperature coefficient of threshold current density ( ) of threshold current density ( ) have been demonstrated by several groups [2]- [11], there has been no consensus on how to interpret the values in terms of fundamental device performance.…”

Section: Introductionmentioning

confidence: 99%

“…Although high values for the characteristic temperature coefficient of threshold current density ( ) of threshold current density ( ) have been demonstrated by several groups [2]- [11], there has been no consensus on how to interpret the values in terms of fundamental device performance. In addition, values of lasers with high , due to large defect-induced monomolecular recombination, can be anomalously high [11].…”

Section: Introductionmentioning

confidence: 99%

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Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

Tansu

Mawst

2002

IEEE Photon. Technol. Lett.

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Abstract-The temperature sensitivity of metal-organic chemical vapor deposition (MOCVD)-grown highly strained (1 2.7%) In 0 4 Ga 0 6 As-and In 0 4 Ga 0 6 As 0 995 N 0 005 quantum-well (QW) active lasers, with lasing wavelength of 1.185 and 1.295 m, respectively, is analyzed in terms of measured fundamental device parameters. From our analysis, the lower 0 values for the InGaAsN QW lasers can be explained in terms of the temperature dependence of the current injection efficiency, presumably due to increased carrier leakage in the InGaAsN QW lasers.

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“…Indeed, when compared with $1.2 lm InGaAs/GaAs devices, T 1 is significantly lower in these devices. 18 The lower T 1 is an indication of thermally activated recombination processes, 19 which may occur in these lasers at higher temperatures. However, both T 0 and T 1 for device B are higher than that for device A over the temperature range studied, which is consistent with the reduced J th of device B than that of device A.…”

mentioning

confidence: 99%

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

Hossain

Hild

Jin

et al. 2013

Applied Physics Letters

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We investigate the temperature and pressure dependence of the threshold current density of edge-emitting GaAsSb/GaAs quantum well (QW) lasers with different device characteristics. Thermally activated carrier leakage via defects is found to be very sensitive to the growth conditions of GaAsSb QWs. An optimization of the growth conditions reduces the nonradiative recombination mechanisms from 93% to 76% at room temperature. This improvement in carrier recombination mechanisms leads to a large improvement in the threshold current density from 533 Acm−2/QW to 138 Acm−2/QW and the characteristic temperature, T0 (T1), from 51 ± 5 K (104 ± 16 K) to 62 ± 2 K (138 ± 7 K) near room temperature.

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Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasers

Cited by 54 publications

References 57 publications

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers

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