Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

Abstract

Abstract-The temperature sensitivity of metal-organic chemical vapor deposition (MOCVD)-grown highly strained (1 2.7%) In 0 4 Ga 0 6 As-and In 0 4 Ga 0 6 As 0 995 N 0 005 quantum-well (QW) active lasers, with lasing wavelength of 1.185 and 1.295 m, respectively, is analyzed in terms of measured fundamental device parameters. From our analysis, the lower 0 values for the InGaAsN QW lasers can be explained in terms of the temperature dependence of the current injection efficiency, presumably due to increased carrier leakage in the InGaAsN QW lasers.

Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

“…[1][2][3][4][5][6][7][8][9][10][11][12] Less temperature sensitivity in InGaAsN QW lasers, at ϭ1300 nm, has also been demonstrated in many of the published results. [1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued.…”

“…4, the g oJ of the InGaAsN QW laser is measured to be 1150 cm Ϫ1 , which is significantly lower that (g oJ ϭ1600-1900 cm Ϫ1 ) of similar InGaAs QW lasers 2 The expected length dependence of T 0 and T 1 is due to the variation of threshold gain with cavity length. 13 In analyzing these T 0 values, one has to consider the fact that high-J th QW lasers with large monomolecular recombination will result in devices with high T 0 values. 13 Relatively low T 0 values for low-J th InGaAsN QW lasers can result from carrier leakage, 13 temperature-sensitive gain, 13 and/or Auger recombination.…”

“…13 In analyzing these T 0 values, one has to consider the fact that high-J th QW lasers with large monomolecular recombination will result in devices with high T 0 values. 13 Relatively low T 0 values for low-J th InGaAsN QW lasers can result from carrier leakage, 13 temperature-sensitive gain, 13 and/or Auger recombination. 14 In summary, high-performance strain-compensated In 0.4 Ga 0.6 As 0.995 N 0.005 QW lasers, with a lasing emission wavelength of 1.295 m, have been achieved by MOCVD utilizing AsH 3 as the As precursor.…”

Improved photoluminescence of InGaAsN–(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

“…Some recent works 14 have attributed the poor T 0 values in 1300 nm InGaAsN QW lasers to the existence of large Auger recombination processes. Other recent work 15 has identified that increased carrier leakage processes and a more temperature sensitive material gain parameter play a pivotal role in leading to increased temperature sensitivity of 1300 nm InGaAsN QW lasers.…”

“…Without employing a growth pause before and after the InGaAsN QW, no luminescence intensity was measured from structures with direct barriers of GaAs 0.85 P 0. 15 . By incorporating a pause of approximately 10 and 15 s before and after the growth of the InGaAsN QW, respectively, a significant improvement in luminescence of the InGaAsN-GaAsP structure is observed with a wavelength emission of 1.26 -1.275 m as shown in Fig.…”