Temperature and dose dependence of ion-beam-induced amorphization in α-SiC

Weber, William J.; Yu, Ning; Wang, L.M.; Hess, Nancy

doi:10.1016/s0022-3115(96)00742-8

Cited by 63 publications

(24 citation statements)

References 27 publications

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“…This is a significantly lower implanted helium concentration for visible bubble formation in SiC compared to other studies that have reported threshold He concentrations of 2.5-8 at.% He [44,[78][79][80]. The lack of amorphization prior to bubble formation in the study by Chen et al [45,70] might be attributable to a slightly higher irradiation temperature, since the amorphization dose for SiC is very sensitive to temperature near 300-350 K [25,83,84].…”

Section: Threshold He Concentrations For Visible Cavity Formationmentioning

confidence: 52%

Effect of H and He irradiation on cavity formation and blistering in ceramics

Zinkle

2012

Nuclear Instruments and Methods in Physics Research Section B:

109

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Section: Threshold He Concentrations For Visible Cavity Formationmentioning

confidence: 52%

Effect of H and He irradiation on cavity formation and blistering in ceramics

Zinkle

2012

Nuclear Instruments and Methods in Physics Research Section B:

109

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“…The tensile strength as Young's modulus (E) for 3C SiC is illustrated in Table 4 for ZnS (B3) phase along with a comparison with the reported data [10,15,50,55,56,60,62,64,65]. The model calculations presented here lead to E value of about 411 GPa at zero pressure.…”

Section: Resultsmentioning

confidence: 72%

Elastic and thermodynamical properties of cubic (3C) silicon carbide under high pressure and high temperature

Varshney

Shriya

Varshney³

et al. 2015

J Theor Appl Phys

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Pressure-dependent first-order phase transition, mechanical, elastic, and thermodynamical properties of cubic zinc blende to rock-salt structures in 3C silicon carbide (SiC) are presented. An effective interatomic interaction potential for SiC is formulated. The potential for SiC incorporates long-range Coulomb, charge transfer interactions, covalency effect, Hafemeister and Flygare type short-range overlap repulsion extended up to the second-neighbour ions, van der Waals interactions and zero point energy effects. The developed potential including many body non-central forces validates the Cauchy discrepancy successfully to explain the high-pressure structural transition, and associated volume collapse. The 3C SiC ceramics lattice infers mechanical stiffening, thermal softening, and ductile (brittle) nature from the pressure (temperature) dependent elastic constants behaviour. To our knowledge, these are the first quantitative theoretical predictions of the pressure and temperature dependence of mechanical and thermodynamical properties explicitly the mechanical stiffening, thermally softening, and brittle/ductile nature of 3C SiC and still awaits experimental confirmations.

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“…Rutherford backscattering spectrometry in a channeling geometry (RBS/C) has become a standard analytical method in investigations of defects and defect processes in single crystals ; these include studies of impurity sites,1 atomic mismatches in strained epitaxial layer superlattices,2 interfacial di †usions3 and irradiation e †ects in crystals. 4 One of the most useful applications of MeV ion channeling methods has been in the study of ionimplantation damage accumulation and recovery in the near-surface region (\1 lm) of single crystals. Complementary to the local characterization of irradiation damage by transmission electron microscopy (TEM), x-ray di †raction (XRD) and spectroscopic techniques, RBS/C provides a quantitative depth proÐling of atomic disorder present in single-crystal materials.…”

Section: Introductionmentioning

confidence: 99%