Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

Güllü, H. H.; Yıldız, D. E.

doi:10.1007/s10854-020-03405-8

Cited by 21 publications

(11 citation statements)

References 49 publications

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“…While the capacitance values usually decreased with the increase in the frequency, the conductance values usually increased. The decrease at the capacitance values can be attributed to the fact that surface/interfaces states are unable to follow alternating current signals toward higher frequencies [44]. The reason for the increase in the conductance values with the increment of the frequency is dependent on the decrease in the series resistance effect [45].…”

Section: Resultsmentioning

confidence: 99%

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

Yılmaz,

Yıldırım,

Aydoğan

et al. 2023

J. Phys. D: Appl. Phys.

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ZnO flake interlayers were fabricated by the electrochemical deposition technique on p-Si to obtain Au/ZnO/p-Si heterostructures for Schottky-type photodiode applications and to test the capacitive performance of the structures. ZnO flake structures were investigated by x-ray diffractometry and scanning electron microscopy measurements, and their crystalline and flake-like structures were confirmed. The Au/ZnO/p-Si heterostructures were characterized by current–voltage (I–V) measurements for various illumination densities of light from dark to 150 mW cm−2. Various heterostructure parameters such as the ideality factor, barrier height, series resistance and rectifying ratio (RR) values were determined by I–V characteristics. The heterostructure exhibited a high RR of 6.85 × 103. The detection parameters revealed 0.49 mA W−1 responsivity and 2.69 × 109 Jones specific detectivity values. Furthermore, capacitance–voltage (C–V) measurements were employed to obtain the capacitive behavior of the Au/ZnO/p-Si heterostructure at various frequencies. Based on these results, Au/ZnO/p-Si heterostructures have potential for photodiode applications.

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Section: Resultsmentioning

confidence: 99%

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

Yılmaz,

Yıldırım,

Aydoğan

et al. 2023

J. Phys. D: Appl. Phys.

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“…The showing peaks at the capacitance values and decreasing peak intensity can be ascribed to existence of the interface states in the device and decreasing response ability of them with increasing frequency, respectively [23]. Furthermore, the capacitance behavior exhibited different tendency for the 100, 200, and 300 kHz frequencies and rest of other frequencies due to that interface states had different response to low and higher frequencies [24]. According to Fig.…”

Section: Resultsmentioning

confidence: 93%

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Koçyiğit

Yıldız

Sarılmaz

et al. 2020

J Mater Sci: Mater Electron

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CuCo 5 S 8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo 5 S 8 /p-Si heterojunction device to characterize the dielectric performance of the CuCo 5 S 8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo 5 S 8 , and the results confirmed the crystalline structure of the CuCo 5 S 8 . While the detailed structures of the CuCo 5 S 8 thiospinel were investigated by transmission electron microscope (TEM), the surface morphology was obtained by scanning electron microscope (SEM). Furthermore, the composition of the CuCo 5 S 8 structures was studied and confirmed by the energy dispersive X-ray (EDX). The CuCo 5 S 8 thiospinel were deposited between the Au and p-Si to obtain Au/CuCo 5 S 8 /p-Si heterojunction. The impedance spectroscopy technique was employed to determine the voltage-and frequencydependent dielectric properties of the Au/CuCo 5 S 8 /p-Si heterojunction. While the frequency was changed from 100 kHz to 1 MHz with 100 kHz interval, the voltage was altered from -2.5 V to ? 2.5 V. The various dielectric parameters such as complex electric permittivity (dielectric constant (e 0 ) and dielectric loss (e 00 )), electric modulus (M 0 and M 00 ), and ac electrical conductivity (r) were extracted from the C-V and G-V measurements and discussed in details. The results highlighted that the Au/CuCo 5 S 8 /p-Si heterojunction device has the frequency-and voltage-dependent dielectric characteristics, and can be considered as switching applications.

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“…It is because of the time‐dependent response of the interface charges in an interfacial space‐charge region at the CP1/ITO and CP2/ITO interfaces 71 . At low frequencies in the applied AC signal, the charges trapped at these states can be found in a contribution to the

C^{'} ((), w)

and

C^{'}' ((), w)

of ITO/CP1 and CP2/ITO electrodes 72,73 . Conversely, they cannot follow the change in this signal at high frequencies, and this fact can be related to the decrease in these values with an increase in frequency 74 .…”

Section: Resultsmentioning

confidence: 98%

Selenophene‐containing conjugated polymers for supercapacitor electrodes

Yıldız

Cevher

Yaşa

et al. 2021

Journal of Polymer Science

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In recent years, studies on conjugated polymers have strengthened the researchers' thought that such polymers can play an essential role in developing new generation energy storage devices. Hence conjugated polymer supercapacitor studies have accelerated. In the present work, selenophene‐containing conjugated polymers previously synthesized via palladium‐catalyzed Suzuki polymerization reaction were used in the preparation of conjugated polymer‐based supercapacitor electrodes. The structure and surface morphology of conjugated polymers were determined using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The selenophene‐containing two conjugated polymer electrodes (ITO/Polymer) were fabricated. The electrochemical behavior of the conjugated polymer electrodes was evaluated through cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The specific capacity of ITO/CP1 electrode at 5 mV/s are 161.2 and 47 (Fg−1) for 0.1 mg and 1.2 mg, respectively. The specific capacity of ITO/CP2 at 5 mV/s electrode are 511 and 108.85 (Fg−1) for 0.08 mg and 0.70 mg, respectively. The time constants were determined as 10 and 625 ms for ITO/CP1 and CP2/ITO electrodes, respectively.

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Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film

Cited by 21 publications

References 49 publications

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

Photodiode behavior and capacitive performance of ZnO nanoflakes synthesized by electrochemical deposition

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Selenophene‐containing conjugated polymers for supercapacitor electrodes

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