2020
DOI: 10.1007/s10854-020-04742-4
|View full text |Cite
|
Sign up to set email alerts
|

The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies

Abstract: CuCo 5 S 8 thiospinel nanocrystals were synthesized by a modified colloidal method, and then it was used as an interfacial layer in the Au/CuCo 5 S 8 /p-Si heterojunction device to characterize the dielectric performance of the CuCo 5 S 8 thiospinel. X-ray diffractometer (XRD) was performed to investigate structural behaviors of the CuCo 5 S 8 , and the results confirmed the crystalline structure of the CuCo 5 S 8 . While the detailed structures of the CuCo 5 S 8 thiospinel were investigated by transmission el… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
4
0

Year Published

2021
2021
2023
2023

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 11 publications
(4 citation statements)
references
References 35 publications
0
4
0
Order By: Relevance
“…The decrease at the capacitance values can be attributed to the fact that surface/interfaces states are unable to follow alternating current signals toward higher frequencies [44]. The reason for the increase in the conductance values with the increment of the frequency is dependent on the decrease in the series resistance effect [45]. Both the C-V and G-V characteristics exhibited peaks due to series resistance or interface/surface states [46][47][48].…”
Section: Resultsmentioning
confidence: 99%
“…The decrease at the capacitance values can be attributed to the fact that surface/interfaces states are unable to follow alternating current signals toward higher frequencies [44]. The reason for the increase in the conductance values with the increment of the frequency is dependent on the decrease in the series resistance effect [45]. Both the C-V and G-V characteristics exhibited peaks due to series resistance or interface/surface states [46][47][48].…”
Section: Resultsmentioning
confidence: 99%
“…The contact is in dot shape and it is formed by using a shadow mask in 0.06 cm 2 area. On the other hand, A* is the effective Richardson constant and it is estimated as 120 A cm −2 K −2 for polymer [27,28]. These temperature dependent parameters can be calculated from exponential -I V relation with eliminating R s contribution in equation (1).…”
Section: Resultsmentioning
confidence: 99%
“…An important contribution to the 𝜀 ′ ′ may occur in bulk interface layer by defects associated with the grain boundaries. Therefore, high values of 𝜀 ′ ′ may be because of the interfacial effects and electron effect in which the motion of free charge carrier within the AIN material [34][35][36][37] As seen Figure 6 The loss tangent (tan δ) can be expressed as follows [24,38,39],…”
Section: Resultsmentioning
confidence: 99%