Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Jahdi, Saeed; Alatise, Olayiwola; Gonzalez, Jose Ortiz; Bonyadi, Roozbeh; Li, Ran; Mawby, P.A.

doi:10.1109/tie.2015.2491880

Cited by 129 publications

(84 citation statements)

References 19 publications

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“…Hence, the turn-ON dIDS/dt can be expressed using (14). (14) When (14) is combined with (8), the resultant equation is given by (15) ( 1 ) )( (…”

Section: Ext +Rg Intmentioning

confidence: 99%

“…The fast switching rate in SiC MOSFETs coupled with parasitic inductances induces electromagnetic oscillations in the voltage and current characteristics [14]. Furthermore, oscillations in the drainsource voltage resulting from source inductance are transmitted back to the gate voltage characteristics through the Miller capacitance [15], hence, monitoring the gate transient as a TSEP is complicated. In [16], harmonic analysis of an IGBT converter output is used as a TSEP whereas in [17,18] the temperature dependency of the gate current in MOSFETs and IGBTs has been used as a TSEP for condition monitoring with promising results demonstrated.…”

Section: Introductionmentioning

confidence: 99%

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

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104

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“…Hence, the turn-ON dIDS/dt can be expressed using (14). (14) When (14) is combined with (8), the resultant equation is given by (15) ( 1 ) )( (…”

Section: Ext +Rg Intmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez

Alatise

et al. 2017

IEEE Trans. Power Electron.

Self Cite

104

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“…Both the SiC 2-level converter and the Si MOSFET MMC are suited to the bidirectional operation necessary to support low carbon electrical supply using energy storage in the form of Vehicle-to-Grid (V2G) energy transfer. Furthermore, it is noted that SiC MOSFET gate drive must be bipolar in order to achieve optimum performance [7][8][9][10]15], with careful design to prevent over-or under-voltage on the gate [15] and to reduce parasitic-induced oscillations [9]. Destruction as a result of unwanted device turn-on is of far greater risk in SiC MOSFETs compared with Si MOSFETs [15,16], while gate oxide reliability has been a challenge to SiC [17,18] with some improvement in gate oxide tolerance to temperature more recently [7].…”

Section: Introductionmentioning

confidence: 99%

LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching

Roscoe

Holliday

McNeill

et al. 2018

IEEE J. Emerg. Sel. Topics Power Electron.

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Abstract-Widespread adoption of electric vehicles will require AC power distribution systems to accommodate high penetrations of power electronic loads, placing increasing demands on the power quality of gridconnected converters. Recent developments in devices and circuit topologies have potential to improve the intrinsic power quality of these grid interface inverters, reducing the need for passive filters and associated reactive power consumption. Wide bandgap devices, such as SiC, have recently gained much attention due to their low switching losses facilitating raised PWM frequencies. However the high cost of SiC together with electromagnetic interference (EMI) resulting from very rapid switching transitions necessary to realize low switching losses cause concern. Previous research in Si MOSFET modular multilevel converters (MMC) suggests a high efficiency alternative with potential for lower EMI. Si MOSFET MMC benefits are enhanced with parallel-connected devices and slowed switching, made possible by low effective switching frequency. This paper uses experimental results to explore the impact of parallel connection and slowed switching on Si MOSFET MMC losses, and presents improved Si MOSFET switching loss models to resolve inaccuracies observed with conventional Si MOSFET models. EMI is then compared between SiC and Si MMC using carefully controlled relative measurements of radiated EMI.

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“…The switching behavior of WBG devices, such as Silicon Carbide (SiC) and Gallium Nitride (GaN) FETs (Field Effect Transistors), has attracted considerable research attention. There are basically three issues concerning WBG device switching behavior currently being considered in research literature [3][4][5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

Wang

Yang

et al. 2018

Electronics

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Silicon Carbide (SiC)-based Bi-Directional Switches (BDS) have great potential in the construction of several power electronic circuits including multi-level converters, solid-state breakers, matrix converters, HERIC (high efficient and reliable inverter concept) photovoltaic grid-connected inverters and so on. In this paper, two issues with the application of SiC-based BDSs, namely, unwanted turn-on and parasitic oscillation, are deeply investigated. To eliminate unwanted turn-on, it is proposed to add a capacitor (C X ) paralleled at the signal input port of the driver IC (integrated circuit) and the capacitance range of C X is also analytically derived to guide the selection of C X . To mitigate parasitic oscillation, a combinational method, which combines a snubber capacitor (C J ) paralleled with the JFET (Junction Field Effect Transistor) and a ferrite ring connected in series with the power line, is proposed. It is verified that the use of C J mainly improves the turn-off transient and the use of a ferrite ring damps the current oscillation during the turn-on transient significantly. The effects of the proposed methods have been demonstrated by theoretical analysis and verified by experimental results.

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Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

Abstract: . (2015) Temperature and switching rate dependence of crosstalk in Si-IGBT and SiC power modules.

Cited by 129 publications

References 19 publications

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

LV Converters: Improving Efficiency and EMI Using Si MOSFET MMC and Experimentally Exploring Slowed Switching

Analysis and Suppression of Unwanted Turn-On and Parasitic Oscillation in SiC JFET-Based Bi-Directional Switches

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