Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500°C by RTA

Utlu, G.; Artunç, N.; Selvī, S.

doi:10.1016/j.matchemphys.2011.11.048

Cited by 7 publications

(8 citation statements)

References 31 publications

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“…Figure 7 shows the BSE-SEM plane view images of the NiSi surface annealed from (a) ALD Ni and (b) PVD Ni at 700 °C. In the images, a spotted dark phase represented the exposed Si region caused by thermal degradation [22]. As shown in the images, a lot of the Si exposed region was observed in PVD NiSi.…”

Section: Resultsmentioning

confidence: 85%

Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2

Kim

Jang

Park

et al. 2015

Journal of the Korean Physical Society

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In this study, the characteristics of nickel thin film deposited by remote plasma atomic layer deposition (RPALD) on p-type Si substrate and formation of nickel silicide using rapid thermal annealing were determined. Bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel, Ni( i Pr-DAD)2, was used as a Ni precursor and ammonia plasma was used as a reactant. This was the first attempt to deposit Ni thin film using Ni( i Pr-DAD)2 as a precursor for the ALD process.The RPALD Ni film was deposited with a growth rate of around 2.2Å/cycle at 250 °C and showed significant low resistivity of 33 μΩ·cm with a total impurity concentration of around 10 at. %.The impurities of the thin film, carbon and nitrogen, were existent by the forms of C-C and C-N in a bonding state. The impurities removal tendency was investigated by comparing of experimental conditions, namely process temperature and pressure. Nitrogen impurity was removed by thermal desorption during each ALD cycle and carbon impurity was reduced by the optimizing of the process pressure which is directly related with a mean free path of NH3 plasma. After Ni deposition, nickel silicide was formed by RTA in a vacuum ambient for 1 minute. A nickel silicide layer from ALD Ni and PVD Ni was compared at the annealing temperature from 500 to 900 °C. NiSi from ALD Ni showed better thermal stability due to the contribution of small amounts of carbon and nitrogen in the asdeposited Ni thin film. Degradation of the silicide layer was effectively suppressed with a use of ALD Ni.

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Section: Resultsmentioning

confidence: 85%

Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2

Kim

Jang

Park

et al. 2015

Journal of the Korean Physical Society

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“…Formation of nickel silicide thin films is mainly carried out by a solid-phase reaction of a nickel film with silicon. Nickel is applied by physical vapor deposition [5][6][7][9][10][11][12][13][14][15][16][17] or chemical deposition [8,18] onto a previously prepared silicon wafer. After this, the Ni/Si system is subjected to heat treatment, during which the phases Ni 2 Si, NiSi and NiSi 2 are sequentially formed [8].…”

Section: Introductionmentioning

confidence: 99%

“…The resulting silicides differ in their formation temperatures and the value of their surface-specific resistance [5,6]. Formation of the Ni 2 Si phase occurs within a temperature range from 175 • C to 300 • C [5,10,14,15,[17][18][19]. According to [5,9,15], the transition from the Ni 2 Si phase to NiSi occurs at temperatures of 275-350 • C, and at a temperature of 700 • C [6,8,14,18], the NiSi 2 phase is formed.…”

Section: Introductionmentioning

confidence: 99%

“…Formation of the Ni 2 Si phase occurs within a temperature range from 175 • C to 300 • C [5,10,14,15,[17][18][19]. According to [5,9,15], the transition from the Ni 2 Si phase to NiSi occurs at temperatures of 275-350 • C, and at a temperature of 700 • C [6,8,14,18], the NiSi 2 phase is formed. Heat treatment is carried out by steady-state annealing in a vacuum [5,7,[10][11][12], in an atmosphere of argon [8] and nitrogen [9], and rapid thermal annealing (RTA) in an atmosphere of argon [16] and nitrogen [6,7,9,11,[13][14][15]17,18].…”

Section: Introductionmentioning

confidence: 99%

“…According to [5,9,15], the transition from the Ni 2 Si phase to NiSi occurs at temperatures of 275-350 • C, and at a temperature of 700 • C [6,8,14,18], the NiSi 2 phase is formed. Heat treatment is carried out by steady-state annealing in a vacuum [5,7,[10][11][12], in an atmosphere of argon [8] and nitrogen [9], and rapid thermal annealing (RTA) in an atmosphere of argon [16] and nitrogen [6,7,9,11,[13][14][15]17,18]. RTT with lamp heating makes it possible to form nickel silicides within a time frame of 5 to 7 s [9,15,17], while steady-state annealing takes at least 30 min [5,[7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

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Microstructure and Properties of Thin-Film Submicrostructures Obtained by Rapid Thermal Treatment of Nickel Films on Silicon

Lapitskaya,

Trukhan,

Kuznetsova

et al. 2024

Surfaces

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Nickel films of 40 nm thickness were obtained by means of magnetron sputtering on a single-crystalline silicon substrate. The films were subjected to rapid thermal treatment (RTT) for 7 s until the temperature increased from 200 to 550 °C. By means of the X-ray diffraction method, the structural-phase composition of nickel films before and after RTT was explored. The atomic force microscopy method due to direct contact with the surface under study, made it possible to accurately define the microstructure, roughness, specific surface energy and grain size of the nickel films before and after RTT, as well as to establish the relationship of these parameters with the phase composition and electrical properties of the films. Surface specific resistance was measured using the four-probe method. Based on XRD results, formation of Ni2Si and NiSi phases in the film was ascertained after RTT at 300 °C. At RTT 350–550 °C, only the NiSi phase was formed in the film. The microstructure and grain size significantly depend on the phase composition of the films. A correlation has been established between specific surface energy and resistivity with the average grain size after RTT at 350–550 °C, which is associated with the formation and constant restructuring of the crystal structure of the NiSi phase.

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The oxidation process of NiSix film at high temperature in air and the antioxidant effect of SiOxNy/NiSix film

Zhang

Liu

Cui

et al. 2015

J Mater Sci: Mater Electron

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Temperature and thickness dependence of the grain boundary scattering in the Ni–Si silicide films formed on silicon substrate at 500°C by RTA

Cited by 7 publications

References 31 publications

Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2

Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni( i Pr-DAD)2

Microstructure and Properties of Thin-Film Submicrostructures Obtained by Rapid Thermal Treatment of Nickel Films on Silicon

The oxidation process of NiSix film at high temperature in air and the antioxidant effect of SiOxNy/NiSix film

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