Ahslract The resistivity of single4ayered thin copper films with thicknesses of 17-124 nm, is studied as a function of the temperature and grain diameter. The resistivity of both a x l e p i l e d and 500 K annealed films is found to increase with decreasing iilm thickness. Our analysis has shown that the grain-boundary scattering is the dominant mntribution and the surface scattering cannot he the cause of the excess resislMly of both asdeposited and 500 K annealed films. The average reflection cwfficienl R of the elecmns scattered by the grain boundaries is found to be 0.38 for both asdeposited and 500 K annealed 61ms over the whole temperature and thickness range studied.

The total electrical resistivity of the CdCr double-layered h i n films, the copper base layers of which have hicknesses of 13.0-26.0 nm, is studied as a function of the temperame in the interval 10&300 K and overlayer thickness. The temperature dependence of the electrical resistivity show two types of behaviour. The temperam-dependent resistivity of the C a r films. the Cr overlayers of which have thicknesses of 1.5 and 2 n m shows a linear variation, but the variation in the resistivity of the CdCr film, the Cr overlayers of which have thicknesses greater than 1.5 n m with the temperature exhibits an oscillatory behaviour over the whole temperam range from 100 to 300 K. Our analysis has shown that the observed resistivity increase is caused by an increased surface scattering of the C X r -1 doublelayered film in comparison with those of the uncovered copper base films The interface scattering cannot be the cause of the e x w s resistivity of both CdCr-I and Cub311 double-layered 6Im.

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