The effects of grain boundary scattering on the electrical resistivity of single-layered silver and double-layered silver/chromium thin films

Artunç, N.; Bilge, Duygu; Utlu, G.

doi:10.1016/j.surfcoat.2006.03.068

Cited by 28 publications

(13 citation statements)

References 19 publications

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“…The resistivity of thin Ag films decreases monotonically below 150 K (in Ref. to LN 2 temperature) and the apparent change of resistivity gradient takes place at lower temperatures, e.g., for Ag about 10–20 K . These observations indicate the dominant role of the Ag layer in carrier transport of AgHT multilayer.…”

Section: Resultsmentioning

confidence: 80%

“…At 293 K, the resistivity is 56 × 10 −6 Ωcm. This is over 35 times more than the resistivity value of bulk silver and about 6 times more than the value of a thin Ag layer of thickness around 10 nm . Multilayer film AgHT comprises also much thicker ITO layers.…”

Section: Resultsmentioning

confidence: 82%

“…Multilayer film AgHT comprises also much thicker ITO layers. The calculated value of resistivity of a multilayer system ITO/Ag/ITO (70/10/70 nm), assuming ρ ITO = 8 × 10 −5 Ωcm and resistivity of thin Ag layer ρ Ag = 9 × 10 −6 Ωcm , is 53 × 10 −6 Ωcm. This result indicates that the conductivity of ITO layers cannot be omitted.…”

Section: Resultsmentioning

confidence: 97%

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Influence of cryogenic temperatures on electrical properties of structures patterned by a laser in ITO/Ag/ITO layers

Lebioda

Pawlak

2016

Physica Status Solidi (a)

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The electrical properties of highly conductive ITO/Ag/ITO multilayer film at cryogenic temperatures have been presented in the paper for the first time. A good electrical conductivity and high thermal resistance of ITO/Ag/ITO are desirable features at cryogenic temperatures. Elements in ITO/Ag/ITO (AgHT™) were patterned using fiber laser ablation. Close to a linear (R2 = 0.999) relationship between resistance and temperature in the range of 293–55 K was confirmed. The dynamics of resistance changes is of the order of 9 × 10−4 1/K. Carrier concentration and mobility have been determined on the basis of Hall voltage measurements. Structures patterned in AgHT™ conductive film can be seen to be suitable for passive elements of low‐temperature electronics.

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Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 82%

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Influence of cryogenic temperatures on electrical properties of structures patterned by a laser in ITO/Ag/ITO layers

Lebioda

Pawlak

2016

Physica Status Solidi (a)

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“…2 includes also the evolution of the electrical resistivity ( ) with the layer thickness, for which a linear relationship t = at + b has been found. Such behaviour is related to the grain-boundary scattering that enables to increase the film resistivity with respect to the metal bulk value ( b ) in the form t = b t + C g , by means of the grain-boundary parameter C g = (3/2)( b b )nR g /(1 − R g ); being b the mean free path for electrons in the metal bulk, R g the reflection coefficient at the grain boundary, and n the thickness to grain size ratio that is taken as the unity in a first approximation [28,29]. For the present samples, the linear fit gives b = 1.6 × 10 −6 cm as the bulk silver resistivity and R g = 5% for the reflection coefficient assuming n = 1.…”

Section: Resultsmentioning

confidence: 99%

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

Guillén

Herrero

2015

Applied Surface Science

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“…Moreover, Ag has low mechanical strength, which is why it has been used in integrated circuit interconnects, electrodes and optical mirrors [11].…”

Section: Introductionmentioning

confidence: 99%

Structural and Morphological Changes in Ag:TiN Nanocomposite Films Promoted by In-Vacuum Annealing

Machado

Pedrosa

Fonseca

et al. 2013

JNanoR

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Thin films composed of titanium nitride doped with silver were deposited by DC reactive sputtering, with Ag contents varying between 0 and 50 at.%. The as-deposited samples were subjected to vacuum annealing treatments, with a range of temperatures varying from 200 to 500°C, in order to study the morphological and structural changes that may occur. The as-deposited samples showed three main zones of basic characteristics, which differ both in terms of the morphology and structural features.With the increase of the annealing temperature, the thermodynamic stability was accelerated, revealing a phenomenon of dispersion of silver particles at 200 °C and the start of its segregation at 300 °C. At 400 °C, the coalescence of the segregated Ag particles begins, while at 500 °C the formation of large clusters of Ag is glaring, particularly in the samples with higher Ag content. In addition, and corroborating the * To whom all correspondence should be sent (fvaz@fisica.uminho.pt) 2 presence of free Ag in the thin films, the increase of the annealing temperature promotes coating's crystallinity and some Ag grain growth.

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The effects of grain boundary scattering on the electrical resistivity of single-layered silver and double-layered silver/chromium thin films

Cited by 28 publications

References 19 publications

Influence of cryogenic temperatures on electrical properties of structures patterned by a laser in ITO/Ag/ITO layers

Influence of cryogenic temperatures on electrical properties of structures patterned by a laser in ITO/Ag/ITO layers

Surface-properties relationship in sputtered Ag thin films: Influence of the thickness and the annealing temperature in nitrogen

Structural and Morphological Changes in Ag:TiN Nanocomposite Films Promoted by In-Vacuum Annealing

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