Abstract:The influence of the electron-phonon interaction on formation of the low-frequency noise in semiconductors is theoretically considered. The determining role of scattering mechanisms in formation of the 1/f low frequency noise is shown. The temperature dependence of the Hooge parameter α H is revealed and explained. The lattice character of α H is proven.1245 Mod. Phys. Lett. B 1998.12:1245-1254. Downloaded from www.worldscientific.com by YALE UNIVERSITY on 07/04/15. For personal use only.
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