Temperature coefficient of SAW frequency in single crystal bulk AlN

Bu, Gang; Čiplys, D.; Shur, M. S.; Schowalter, L. J.; Schujman, Sandra; Gaška, R.

doi:10.1049/el:20030488

Cited by 43 publications

(15 citation statements)

References 6 publications

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“…Among them, 11 have an experimental character [15][16][17][18][19][20][21][22][23] and the other 34 were derived by using calculation methods . Some of these studies did not provide complete sets of C ij values, showing only C 44 [20,21] or not presenting C 12 [17] nor C 11 , C 12 and C 44 [39] values for the calculations. Note that, for a good estimation, the C 13 and C 33 assessments in Ref.…”

Section: Methodsmentioning

confidence: 99%

Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

et al. 2010

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Section: Methodsmentioning

confidence: 99%

Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

et al. 2010

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“…This is because either the AlN structures have a single anchor or the modes of vibration have an equivalent stiffness at the anchoring location that is much larger than the stiffness of the anchor itself; therefore any deformation at the clamping location is negligible. In general, we can state that for contour-mode resonators TCF (14) where and are the linear coefficients of thermal expansion for AlN in the 1 (in the plane of the film) and 3 (out of plane) directions, respectively; is a coefficient that can be found in the literature [21] and describes the temperature variation of the in-plane modulus of elasticity. For AlN, the largest contribution to the TCF comes from the equivalent in-plane modulus of elasticity 37 ppm C , whereas and take on values of 4.2 and 5.3 ppm C, respectively.…”

Section: Temperature Coefficient Of Frequencymentioning

confidence: 99%

Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators

Piazza

Stephanou

Pisano

2006

J. Microelectromech. Syst.

573

307

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This paper reports theoretical analysis and experimental results on a new class of rectangular plate and ringshaped contour-mode piezoelectric aluminum nitride radio-frequency microelectromechanical systems resonators that span a frequency range from 19 to 656 MHz showing high-quality factors in air (Q max = 4300 at 229.9 MHz), low motional resistance (ranging from 50 to 700 Ω), and center frequencies that are lithographically defined. These resonators achieve the lowest value of motional resistance ever reported for contour-mode resonators and combine it with high Q factors, therefore enabling the fabrication of arrays of high-performance microresonators with different frequencies on a single chip. Uncompensated temperature coefficients of frequency of approximately 25 ppm/°C were also recorded for these resonators. Initial discussions on mass loading mechanisms induced by metal electrodes and energy loss phenomenon are provided. KeywordsAluminum nitride, contour-mode resonators, microelectromechanical systems (MEMS) resonators, piezoelectric resonators, radio-frequency (RF) MEMS This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of the University of Pennsylvania's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. Abstract-This paper reports theoretical analysis and experimental results on a new class of rectangular plate and ring-shaped contour-mode piezoelectric aluminum nitride radio-frequency microelectromechanical systems resonators that span a frequency range from 19 to 656 MHz showing high-quality factors in air (Q max = 4300 at 229.9 MHz), low motional resistance (ranging from 50 to 700 ), and center frequencies that are lithographically defined. These resonators achieve the lowest value of motional resistance ever reported for contour-mode resonators and combine it with high Q factors, therefore enabling the fabrication of arrays of high-performance microresonators with different frequencies on a single chip. Uncompensated temperature coefficients of frequency of approximately 25 ppm C were also recorded for these resonators. Initial discussions on mass loading mechanisms induced by metal electrodes and energy loss phenomenon are provided.[ 2006-0019]Index Terms-Aluminum nitride, contour-mode resonators, microelectromechanical systems (MEMS) resonators, piezoelectric resonators, radio-frequency (RF) MEMS.

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“…To enhance the properties mentioned above the microstructure of AlN has been optimized to yield either single crystals [1][2][3], or columnar [0 0 2] highly textured films [4].…”

Section: Introductionmentioning

confidence: 99%

Microstructures diagram of magnetron sputtered AlN deposits: Amorphous and nanostructured films

Brien

Pigeat

2007

Journal of Crystal Growth

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To synthesise homogeneous nanostructured aluminium nitride deposits on [0 0 1] Si substrates, the radio frequency magnetron reactive sputtering deposition process was tested. The microstructure and chemical composition of the films were studied as a function of the plasma working pressure P and the radio frequency power W. This paper describes the different morphologies that could be produced. Four microstructural types were identified and are presented versus the two parameters P and W as a map of microstructures. The first one is the well-known columnar microstructure. The second one is made of short rods. The third one consists of equiaxed particles while the fourth and last microstructure is amorphous. The ''deposit morphology-process parameters'' correlation is discussed. The progressive evolution of the microstructures could be related to the deposition rate of the films. Morphology was studied by transmission electron microscopy, and chemical investigations were performed by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. r

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Temperature coefficient of SAW frequency in single crystal bulk AlN

Cited by 43 publications

References 6 publications

Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

Structural and compositional homogeneity of InAlN epitaxial layers nearly lattice-matched to GaN

Piezoelectric Aluminum Nitride Vibrating Contour-Mode MEMS Resonators

Microstructures diagram of magnetron sputtered AlN deposits: Amorphous and nanostructured films

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