Temperature controlled properties of sub-micron thin SnS films

Nwankwo, Stephen; Campbell, Stephen A.; Reddy, Kotte Ramakrishna; Beattie, Neil; Barrioz, Vincent; Zoppi, Guillaume

doi:10.1088/1361-6641/aabc6f

Cited by 9 publications

(6 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From Table 1, one can deduce that the band gap increases with deposition cycles, which indicates that the band gaps are highly dependent on the deposition cycles. The band gap values showed that PbSnS is a ternary material whose band gap system falls between the range of the 2 binary constituents of SnS (1.0-1.47 eV) [6,7] and PbS (2.1-2.75 eV) [21,22]. Increasing the deposition cycles shift the bandgap value of the ternary PbSnS material till it reaches 1.75 eV, dueto the gradual replacement of some Sn atoms by Pb atoms in the ternary PbSnS matrix.…”

Section: Optical Studiesmentioning

confidence: 99%

“…Thin films of SnS are suitable for various devices such as photo-detectors, infrared detectors, sensing devices and solar cells fabrication [5]. It is an ideal candidate for making costeffective solar cells having exhibited good optical properties, excellent band gap range of 1.3 to 1.5 eV, high absorption coefficient (~10 5 cm -1 ), good carrier concentrations and hole mobility (0.8 -15.3 cm 2 V -1 S -1 ) [6][7][8]. Besides these properties, theoretical calculations have indicated a realistic conversion efficiency of above 25 % for SnS-based heterojunction solar cells [6].…”

Section: Introductionmentioning

confidence: 99%

“…It is an ideal candidate for making costeffective solar cells having exhibited good optical properties, excellent band gap range of 1.3 to 1.5 eV, high absorption coefficient (~10 5 cm -1 ), good carrier concentrations and hole mobility (0.8 -15.3 cm 2 V -1 S -1 ) [6][7][8]. Besides these properties, theoretical calculations have indicated a realistic conversion efficiency of above 25 % for SnS-based heterojunction solar cells [6]. However, the maximum efficiency ever reported for SnS-based materials is far below 5 % due to low conductivity [9].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

Damisa

Emegha

2021

Trends Sci

View full text Add to dashboard Cite

The effects of deposition cycles on the structural and optical properties of lead tin sulphide (PbSnS) thin films have been described. Successive ionic layer adsorption and reaction (SILAR) method was used to deposit the ternary material on soda-lime substrates. In the present work, the PbSnS films were grown using lead nitrate, tin chloride dehydrate and thioacetamide solutions as sources of Pb, Sn and S, respectively. XRD measurements revealed that the deposited films were polycrystalline in nature with strong adherent to the substrates. The transmittance was found to be high in the near infrared regions of the electromagnetic radiation and, also increased with deposition cycles. The band gap energy was found to vary from 1.70 to 1.75 eV for 10 and 35 deposition cycles. The study indicates that SILAR is an excellent method in depositing good quality films for device applications. HIGHLIGHTS SILAR is an excellent technique for depositing thin films of lead tin sulphide (PbSnS) Deposition cycles influences the XRD and optical properties of PbSnS thin films PbSnS thin films are useful for solar cell fabrications The band gaps of the PbSnS varies from 1.70 to 1.75 eV with deposition cycles

show abstract

Section: Optical Studiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

Damisa

Emegha

2021

Trends Sci

View full text Add to dashboard Cite

show abstract

“…Tin sulphide (SnS) is a potential material for the production of thin solar cells because of its high absorption coefficient ( α ≈ 10 4 cm −1 near the fundamental edge), suitable band gap ( E g = 1.1-2.1 eV) and high hole mobility of 90 cm 3 V −1 S −1 [1][2][3]. SnS semiconductors could present p or n-type conductivity owing to the preparation conditions and doping materials, which allow the films to be used as an absorption layers in hetero-junction solar cells fabrication [1,4,5].…”

Section: Introductionmentioning

confidence: 99%

Deposition Time induced Structural and Optical Properties of Lead Tin Sulphide Thin Films

Damisa¹,

Emegha

Ikhioya

2021

J. Nig. Soc. Phys. Sci.

View full text Add to dashboard Cite

Lead tin sulphide (Pb-Sn-S) thin films (TFs) were deposited on fluorine-doped tin oxide (FTO) substrates via the electrochemical deposition process using lead (II) nitrate [Pb(NO3)2], tin (II) chloride dehydrate [SnCl2.2H2O] and thiacetamide [C2H5NS] precursors as sources of lead (Pb), tin (Sn) and sulphur (S). The solution of all the compounds was harmonized with a stirrer (magnetic) at 300k. In this study, we reported on the improvements in the properties (structural and optical) of Pb-Sn-S TFs by varying the deposition time. We observed from X-ray diffractometer (XRD) that the prepared material is polycrystalline in nature. UV-Vis measurements were done for the optical characterizations and the band gap values were seen to be increasing from 1.52 to 1.54 eV with deposition time. In addition to this, the absorption coefficient and refractive index were also estimated and discussed.

show abstract

“…To the best of our knowledge, there is no previous literature reported on PVA capped SnS thin films deposited by chemical bath deposition. Table 1 shows the reported literature [11,[47][48][49][50][51][52][53][54] on SnS thin films deposited using different methods. A critical analysis of the literature indicated that deposition of SnS films in all the methods, except CBD was carried out at high temperatures.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application

2019

View full text Add to dashboard Cite

Tin monosulphide (SnS) thin films capped by PVA have been successfully deposited on glass substrates for cost effective photovoltaic device applications by a simple and low-cost wet chemical process, chemical bath deposition (CBD) at different bath temperatures varying in the range, 50–80 °C. X–ray diffraction analysis showed that the deposited films were polycrystalline in nature, showing orthorhombic structure with an intense peak corresponding to (040) plane of SnS. These observations were further confirmed by Raman analysis. FTIR spectra showed the absorption bands which corresponds to PVA in addition to SnS. The scanning electron microscopy and atomic force microscopy studies revealed that the deposited SnS films were uniform and nanostructured with an average particle size of 4.9 to 7.6 nm. The optical investigations showed that the layers were highly absorbing with the optical absorption coefficient ~105 cm–1. A decrease in optical band gap from 1.92 to 1.55 eV with an increase of bath temperature was observed. The observed band gap values were higher than the bulk value of 1.3 eV, which might be due to quantum confinement effect. The optical band gap values were also used to calculate particle size and the results are discussed.

show abstract

Temperature controlled properties of sub-micron thin SnS films

Cited by 9 publications

References 42 publications

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

XRD and UV-Vis Spectroscopic Studies of Lead Tin Sulphide (PbSnS) Thin Films

Deposition Time induced Structural and Optical Properties of Lead Tin Sulphide Thin Films

Structural and optical studies on PVA capped SnS films grown by chemical bath deposition for solar cell application

Contact Info

Product

Resources

About