Temperature dependence modeling for MOS VLSI circuit simulation

Wan, C.-P.; Sheu, B.J.

doi:10.1109/43.39068

Cited by 18 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several main effects are responsible for the variation of the thermal coefficient, as the t. The Temperature influences [11][12][13] the threshold voltage, the carrier's mobility in the channel, the mobility reduction factor due to the longitudinal electrical field, the intrinsic resistors, the intrinsic diode current and capacitance. An uniform chip temperature is assumed for the power MOSFET transistor.…”

Section: The Power Mosfet Transistormentioning

confidence: 99%

Modeling of Power Mosfet and Bipolar Transistors Taking into Account the Thermoelectrical Interactions

Lallement

Bouchakour

Maurel

1995

Modeling in Analog Design

View full text Add to dashboard Cite

show abstract

Section: The Power Mosfet Transistormentioning

confidence: 99%

Modeling of Power Mosfet and Bipolar Transistors Taking into Account the Thermoelectrical Interactions

Lallement

Bouchakour

Maurel

1995

Modeling in Analog Design

View full text Add to dashboard Cite

show abstract

“…[9]. Uniform heating of integrated circuit chip leads to a uniform change in tempmature sensitive parameters of all devices on the semiconductor chip.…”

Section: Introductionmentioning

confidence: 99%

FTGMOS: A novel feedback thermal gradient MOS circuit model

Sandha

Singh²,

Nagchoudhuri³

2003 IEEE Conference on Electron Devices and Solid-State Circuits (IEEE Cat. No.03TH8668)

View full text Add to dashboard Cite

A novel hardware implementable model for MOS devices in an integrated circuit is proposed that negates the thermal effects. It applies a correction to the device whose magnitude varies in accordance with the amount of error introduced in the device due to thermal gradient. This model introduces corrections by a suitable circuit external to the device. The FTGMOS model can he applied to all the devices in an integrated circuit to obtain the circuit performance as if thermal effects are absent altogether.

show abstract

Introduction

Electrothermal Analysis of VLSI Systems

View full text Add to dashboard Cite

Temperature dependence modeling for MOS VLSI circuit simulation

Cited by 18 publications

References 19 publications

Modeling of Power Mosfet and Bipolar Transistors Taking into Account the Thermoelectrical Interactions

Modeling of Power Mosfet and Bipolar Transistors Taking into Account the Thermoelectrical Interactions

FTGMOS: A novel feedback thermal gradient MOS circuit model

Introduction

Contact Info

Product

Resources

About