Temperature Dependence of a-Si:H Nip Diodes

Abstract

We analyse the temperature dependence of the forward characteristics of a-Si:H nip diodes, which are characterised by a well defined exponential region at low bias and space charge limited current at higher bias. At each bias, the temperature dependence of the diodes shows a well defined activation energy and a linear dependence on bias exists for both the activation energy and exponential prefactor.We describe these phenomena with a first order temperature expansion of the diode quality factor n and present a physical interpretation in terms of electron and hole recombination in the i-layer.

Direct white light emission from inorganic–organic hybrid semiconductor bulk materials

“…The activation energy of the hybrid material was calculated to be 28-43 meV. 18 Photoconductivity measurements of the [Cd 2 Se 2 (ba)]:25 mol% Te were also performed under a red LED illumination, as shown in Fig. 6.…”