Temperature dependence of Dyakonov-Perel spin relaxation in zinc-blende semiconductor quantum structures

Kainz, J.; Rößler, U.; Winkler, Roland

doi:10.1103/physrevb.70.195322

Cited by 48 publications

(88 citation statements)

References 27 publications

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“…As pointed out in Ref. 29, the DP dephasing rate depends only weakly on T in the degenerate regime and in the intermediate temperature range, apart from its proportionality to the electron scattering time. As our mobility is quite constant over the temperature range measured, we do not expect large variations.…”

mentioning

confidence: 60%

Spin-orbit interaction and spin relaxation in a two-dimensional electron gas

et al. 2009

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Using time-resolved Faraday rotation, the drift-induced spin-orbit field of a two-dimensional electron gas in an InGaAs quantum well is measured. Including measurements of the electron mobility, the Dresselhaus and Rashba coefficients are determined as a function of temperature between 10 and 80 K. By comparing the relative size of these terms with a measured in-plane anisotropy of the spin-dephasing rate, the D'yakonv-Perel' contribution to spin dephasing is estimated. The measured dephasing rate is significantly larger than this, which can only partially be explained by an inhomogeneous g factor.The possibility to manipulate spins in semiconductors is a requirement for future spin-based information processing.1 Using the spin-orbit (SO) interaction 2,3 is a promising way to precisely control spin polarization because of its simple principle based on external gate electrodes.4,5 Manipulation of spins using the SO interaction has been shown in various semiconductor systems, such as bulk semiconductors 6 , two-dimensional electron gases 7 (2DEGs), and even quantum dots containing only one single electron.8 On the other hand, the SO interaction is a source for spin dephasing. In 2DEGs, the SO interaction induces a linear k-dependent splitting.9 This splitting gives rise to an effective magnetic field, leading to dephasing of the polarized electron spins.10 This effect is known as the D'yakonv-Perel' (DP) mechanism, and its control through manipulation of the SO interaction has been proposed 11 as an alternative to the ballistic spin transistor.4 A careful engineering of the SO interaction is therefore crucial for using it to manipulate the spin.In a 2DEG at intermediate temperatures, it is often assumed that the spin decay is governed by the DP mechanism.12,13 Based on this assumption, information on the SO interaction in semiconductor quantum wells (QWs) was obtained from measurements of the spin-dephasing rate.14,15,16 An independent measurement of the relative size of the SO interaction in (110)-grown QWs using the photogalvanic effect has been described in Ref. 17 and compared to the spin decay time. In this paper, we report on quantitative and independent measurements of the SO interaction and the spin-dephasing rate in an InGaAs QW, utilizing time-resolved Faraday rotation. In a further development of the method described in Ref. 7, a well-defined current is applied in the 2DEG using Ohmic contacts and a mesa structure (in Ref. 7, the electron drift was induced by an ac voltage applied to Schottky contacts in an unstructured 2DEG). The drifting electrons see an effective SO magnetic field, in the following referred to as drift SO field. The sizes of its two contributions, the Rashba 3 and the Dresselhaus 2 fields, are determined as a function of temperature T from the measured influence of the in-plane electron drift velocity on the spin precession. Comparing our results with mea- sured spin-dephasing rates and their in-plane anisotropy, we find that DP is not the only mechanism for spin decay in our samples...

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confidence: 60%

Spin-orbit interaction and spin relaxation in a two-dimensional electron gas

et al. 2009

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“…The Rashba term, ⍀ R , arises from the structural asymmetry of the heterostructure. 10,19,[25][26][27][28][29][30][31][32] The coefficient ␣ varies with the average electric field across the well and with contributions from the interfaces between quantum well and barrier layers. 10,[25][26][27][28][29][30][31][32][33] Theoretical studies of asymmetric n-InSb/ InAlSb quantum wells indicate that interface contributions to ␣ dominate.…”

Section: Introductionmentioning

confidence: 99%

Spin-orbit interaction determined by antilocalization in an InSb quantum well

et al. 2010

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The magnetoresistance at temperatures below 20 K in an n-InSb/ In 0.85 Al 0.15 Sb two-dimensional electron system is studied and described in terms of antilocalization due to quantum interference under strong spin-orbit interaction. The spin-orbit interaction coefficients are extracted by fitting the magnetoresistance data to an antilocalization theory distinguishing the Rashba and Dresselhaus contributions. A good agreement between magnetoresistance data and theory suggests a Rashba coefficient ͉␣͉Ϸ0.03 eV Å and a Dresselhaus coefficient ␥ Ϸ 490 eV Å 3 . A strong contribution from the Dresselhaus term leads to pronounced anisotropy in the energy splitting induced by spin-orbit interaction in the two-dimensional electron dispersion.

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“…This is in sharp contrast with what we find. Given that the DP process has a relatively weak temperature dependence 16 it seems that EY is still the dominant spin relaxation mechanism in thin films. However, in thin films, the primary mobility degradation mechanism is not surface roughness scattering but probably phonon scattering which causes the strong temperature dependence.…”

Section: Refmentioning

confidence: 99%

Spin Transport in Self Assembled All-Metal Nanowire Spin Valves: A Study of the Pure Elliott-Yafet Mechanism

Pramanik¹,

Stefanita²,

Bandyopadhyay³

2006

J. Nanosci. Nanotech.

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Abstract:We report experimental study of spin transport in all metal nanowire spin valve structures. The nanowires have a diameter of 50 nm and consist of three layers -cobalt, copper and nickel. Based on the experimental observations, we determine that the primary spin relaxation mechanism in the paramagnet copper is the Elliott-Yafet mode associated with frequent interface roughness scattering. This mode is overwhelmingly dominant over all other modes, so that we are able to study the pure Elliott-Yafet mechanism. We deduce that the spin diffusion length associated with this mechanism is about 16 nm in our nanowires and is fairly temperature independent in the range 1-100 K. The corresponding spin relaxation time is about 100 femtoseconds. We also find that the spin relaxation is fairly independent of the electric field driving the current in the field range 0.75 -7.5 kV/cm.

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Temperature dependence of Dyakonov-Perel spin relaxation in zinc-blende semiconductor quantum structures

Cited by 48 publications

References 27 publications

Spin-orbit interaction and spin relaxation in a two-dimensional electron gas

Spin-orbit interaction and spin relaxation in a two-dimensional electron gas

Spin-orbit interaction determined by antilocalization in an InSb quantum well

Spin Transport in Self Assembled All-Metal Nanowire Spin Valves: A Study of the Pure Elliott-Yafet Mechanism

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