Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

Abstract

Articles you may be interested inTemperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As Appl. Phys. Lett. 105, 012402 (2014); 10.1063/1.4888645Thickness dependent magnetic properties of (Ga,Mn)As ultrathin films Investigation of an effective anisotropy field involved in photoinduced precession of magnetization in (Ga,Mn)As Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk ͑Ga,Mn͒As diluted magnetic semiconductors ͑DMS͒. An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed ͑Ga,Mn͒As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect.

Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires

“…Similar trend in temperature-dependent g-factor has been reported in DMS system of (Ga,Mn)As. 68 Figure 5e shows the plot of the obtained parameters c and d as a function of temperature at V g = 50 V, while the inset displays parameters c and d as a function of gate voltage at 2 K. Here, the biasdependent behavior of fitting parameters c and d might be associated with the enhanced exchange interaction with increasing gate voltage. We further estimated the individual band parameters σ 1 , σ 2 , μ 1 , μ 2 , n 1 , and n 2 for the two spin-split sub-bands by using eqs 4 and 5 together with total conductivity and the mobility from the FET curve at 2 K. As shown in Figure 5f, the asymmetry of the conductivity and mobility between the two bands became stronger as the applied gate voltage was increased.…”

Spin dynamics in semiconductors

“…The temperature dependence of electron, hole and exciton spin relaxation has been studied in Refs. [450,749,751,752]. Smits et al presented a systematic experimental study on excitonic enhancement of electron/hole spin relaxation in CdMnTe based quantum well structures [749].…”

Hybrid electron spin resonance and whispering gallery mode resonance spectroscopy of Fe3+in sapphire

“…26,27 The determination of g has been achieved in numerous materials, such GaAs, CdTe, InP, and graphite, and with various techniques. [28][29][30][31][32][33] In Al 2 O 3 crystals, electron spin resonance measurements have allowed the calculation of this factor for different ions in the microwave range. These measurements are summarized in Table II.…”