Articles you may be interested inPhysical properties of amorphous InGaZnO 4 films doped with Mn Appl. Phys. Lett. 94, 092504 (2009); 10.1063/1.3095505Structure, magnetization, and low-temperature spin dynamic behavior of zincblende Mn-rich Mn(Ga)As nanoclusters embedded in GaAs

Articles you may be interested inTemperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As Appl. Phys. Lett. 105, 012402 (2014); 10.1063/1.4888645Thickness dependent magnetic properties of (Ga,Mn)As ultrathin films Investigation of an effective anisotropy field involved in photoinduced precession of magnetization in (Ga,Mn)As Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk ͑Ga,Mn͒As diluted magnetic semiconductors ͑DMS͒. An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed ͑Ga,Mn͒As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect.

Low-temperature magnetotransport behaviors of heavily Mn-doped (Ga,Mn)As films with high ferromagnetic transition temperature Appl. Phys. Lett. 95, 182505 (2009); 10.1063/1.3259821Spin-glass-like behavior caused by Mn-rich Mn(Ga)As nanoclusters in GaAs

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.