Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates

Abstract

AlN with a large bandgap energy is one of the most attractive materials for high-temperature applications. However, performance of AlN devices at high temperatures has been limited by technical problems with electrical characterization systems. Here, we show that Schottky-barrier diodes (SBDs) and metal-semiconductor field-effect transistors with Si-implanted AlN channels can operate at 1100 K and 1000 K, respectively. The breakdown voltage and barrier height of the AlN SBD were 610 V and 3.5 eV, respectively. We found that the high barrier height and thermal stability of the Ni contact on AlN greatly contributed to high-temperature operation of the devices.

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

“…We observed a reduced ρ c of 3.59 × 10 −2 Ωcm 2 at RT and a minimum value of 1.26 × 10 −3 Ωcm 2 at 473 K, which are comparable to high Al-content AlGaN. 13,14,19) Furthermore, the obtained ρ c was also lower than that of Si-ion implanted AlN on sapphire at RT and high temperatures, where the latter showed the lowest comparable ρ c of 4.0 × 10 −3 Ωcm 2 only at 1100 K. 25) Figure 3(a) shows the temperature-dependent I-V characteristics of the AlN SBDs. The device showed a high ON/ OFF ratio of 10 7 -10 9 as the temperature varies from RT to 573 K. Using the TE model, η and j eff were calculated at each temperature.…”