We propose a procedure to grow GaN quantum dots (QDs) on AlN by using the Ga surfactant effect in plasma-assisted molecular beam epitaxy. Self-formed GaN islands were spontaneously generated under vacuum, after evaporation of the Ga bilayer stabilizing the two-dimensional GaN layer grown under Ga-rich conditions. Island characteristics (size and density) are studied as a function of the nominal amount of GaN deposited. We demonstrate that the QD density can be controlled in the 3×1010 cm−2–2×1011 cm−2 range. It is shown that beyond a given amount of GaN nominally deposited, there is a coexistence between elastic and plastic relaxation, with GaN islands being formed on a partially relaxed two-dimensional GaN layer thicker than two monolayers.

We have established an allergic dermatitis model in NC/Nga mice by repeated local exposure of mite antigen for analyzing atopic dermatitis. We examined how four Kampo medicines, Juzen-taiho-to, Hochu-ekki-to, Shofu-san and Oren-gedoku-to, on the dermatitis model to obtain basic information on their usefulness for treating atopic dermatitis. Mite antigen (Dermatophagoides farinaecrude extract) solution at a concentration of 10 mg/ml was painted on the ear of NC/Nga mice after tape stripping. The procedure was repeated five times, at 7 day intervals. An apparent biphasic ear swelling was caused after the fourth and fifth antigen exposures with elevated serum IgE levels and accumulation of inflammatory cells. In the cervical lymph nodes and ear lobes, the five procedures of antigen exposure induced interleukin-4 mRNA expression but reduced interferon-γ mRNA expression. Oral administration of all four Kampo medicines inhibited the formation of ear swelling and inflammatory cell accumulation. Juzen-taiho-to and Hochu-ekki-to apparently prevented the elevation of serum IgE level. Furthermore, the four Kampo medicines showed a tendency to prevent not only the increase in interleukin-4 mRNA expression but also the decrease in interferon-γ mRNA expression. The present results indicate that Juzen-taiho-to, Hochu-ekki-to, Shofu-san and Oren-gedoku-to may correct the Th1/Th2 balance skewed to Th2, and this activity helps inhibit dermatitis in NC/Nga mice. The ability of the Kampo medicines to correct the Th1/Th2 balance seems to underlie their effectiveness in treating of atopic dermatitis.

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The effects of AlN overgrowth on the structural properties of GaN nanostructures (quantum wells and quantum dots) grown by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy, transmission electron microscopy, and reflection high-energy electron diffraction. The capping process induces a remarkable change in the dimensions of the nanostructures. The overgrowth process implies a thinning of the GaN quantum well and an isotropic reduction of the GaN island size. We demonstrate that this thickness/size reduction affects only the top GaN/AlN interface. The phenomenon is attributed to an exchange mechanism between Al atoms from the cap layer and Ga atoms in the nanostructures. We also demonstrate that this exchange is thermally activated and depends on the strain state of the nanostructures.

Al 0.26 Ga 0.74 N ∕ Al N ∕ Ga N heterostructures with 1-nm-thick AlN interfacial layers were grown on 100-mm-diam epitaxial AlN/sapphire templates and sapphire substrates by metalorganic vapor phase epitaxy. It was found that AlN/sapphire templates significantly enhanced the electron mobility of the two-dimensional electron gas (2DEG) confined at the GaN channel. This can be explained by the high-crystal-quality GaN channel realized by the use of epitaxial AlN/sapphire templates as substrates. The very high Hall mobilities of approximately 2100cm2∕Vs at room temperature and approximately 17000cm2∕Vs at 77K with a 2DEG density of approximately 1×1013∕cm2 were uniformly obtained for AlGaN∕AlN∕GaN heterostructures on 100-mm-diam epitaxial AlN/sapphire templates. The Hall mobility of AlGaN∕AlN∕GaN heterostructures on epitaxial AlN/sapphire templates reached a very high value of 25500cm2∕Vs at 15K.