Temperature Dependence of Electrical Transport and Magnetization Reversal in Magnetic Tunnel Junction

Chao, C. T.; Chen, Che-Chin; Kuo, Chao‐Yin; Wu, Chi‐Shin; Horng, Lance; Isogami, Shinji; Tsunoda, Masakiyo; Takahashi, M.; Wu, Jong-Ching

doi:10.1109/tmag.2010.2045354

Cited by 8 publications

(8 citation statements)

References 16 publications

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“…It can be seen from Fig. 8 that the theoretical results agree qualitatively well with the experiments [3,[16][17][18][19][20][21][22][23]. Here, it should be pointed out that, the experimental results are only within part range of the parameters in the present model.…”

Section: Methodssupporting

confidence: 80%

“…However, the decrease of TMR with rising temperature is mostly carried by a change in the R AP . The R P changes so little that it seems roughly constant, if compared to the R AP [3,[16][17][18][19][20][21][22][23]. Theoretically, the modified version of the magnon excitation model [24] is at hand for the mechanism of the above temperature dependence.…”

Section: Introductionmentioning

confidence: 97%

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Effects of temperature on the magnetic tunnel junctions with periodic grating barrier

Fang

Xiao

Rui

et al. 2018

Journal of Magnetism and Magnetic Materials

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We have developed a tunneling theory to describe the temperature dependence of tunneling magnetoresistance (TMR) of the magnetic tunnel junctions (MTJs) with periodic grating barrier.Through the Patterson function approach, the theory can handle easily the influence of the lattice distortion of the barrier on the tunneling process of the electrons. The lattice distortion of the barrier is sensible to the temperature and can be quite easily weakened by the thermal relaxation of the strain, and thus the tunneling process of the electrons gets changed highly with the variation of the temperature of the system. That is just the physical mechanism for the temperature dependence of the TMR. From it, we find that the decrease of TMR with rising temperature is mostly carried by a change in the antiparallel resistance (R AP ), and the parallel resistance (R P ) changes so little that it seems roughly constant, if compared to the R AP , and that, for the annealed MTJ, the R AP is significantly more sensitive to the strain than the R P , and for non-annealed MTJ, both the R P and R AP are not sensitive to the strain. They are both in agreement with the experiments of the MgO-based MTJs. Other relevant properties are also discussed.

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Section: Methodssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 97%

Effects of temperature on the magnetic tunnel junctions with periodic grating barrier

Fang

Xiao

Rui

et al. 2018

Journal of Magnetism and Magnetic Materials

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“…This problem is clearly shown in Figure 12 [26] and in Chien-Tu Chao et. al [27]. This graph shows the variation of ambient temperature on the conductivity of MTJ sensors.…”

Section: Gmr Sensor Behaviormentioning

confidence: 97%

Compass Applications Using Giant Magnetoresistance Sensors (GMR)

Haji-Sheikh

2013

Giant Magnetoresistance (GMR) Sensors

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Abstract. The use of giant magnetoresistors, or GMR, for compass magnetometers is a recent trend in Earth field sensing. Thin film compass devices are often used in applications in global positioning systems (GPS) to aid in navigation. A GPS system can only tell a user about the direction of travel as long as the user is in motion. A compass indicates static orientation of the user which, with the addition of gyroscopic information along with GPS data can give precise location and orientation to users. Modern digital devices often incorporate compass devices with location applications to better aid consumers in locating services.

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“…The smaller thicknesses correspond to the standard p-STT-MRAM regime while the larger ones correspond to the PSA-STT-MRAM regime, as described by the sketches on the right of the diagram. Reproduced from [24] with permission of The Royal Society of Chemistry.…”

Section: Fabrication Of Psa-stt-mram Cellsmentioning

confidence: 99%

“…To increase the p-STT-MRAM downsize scalability at sub-20 nm technology nodes and to limit the thermal dependence of the anisotropy and of the TMR, a novel type of MRAM, called perpendicular shape anisotropy (PSA) STT-MRAM has recently been proposed [24,25]. This paper describes this PSA-STT-MRAM new approach which aims at overcoming what limits the downsize scalability of traditional p-STT-MRAM, namely (i) the negative contribution of the shape anisotropy and (ii) the reduction of I c due to the reduction of α at small thicknesses.…”

Section: Introductionmentioning

confidence: 99%

Perpendicular shape anisotropy spin transfer torque magnetic random-access memory: towards sub-10 nm devices

Perrissin¹,

Grégoire²,

Lequeux³

et al. 2019

J. Phys. D: Appl. Phys.

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A new concept to increase the downsize scalability of perpendicular spin transfer torque magnetic random-access memory (p-STT-MRAM), called perpendicular shape anisotropy (PSA) STT-MRAM is presented. This approach consists of significantly increasing the thickness of the storage layer in p-STT-MRAM to values comparable to the cell diameter so as to induce a PSA in this layer which comes on top of the MgO/FeCoB interfacial anisotropy. This PSA-STT-MRAM is provided by depositing a thick ferromagnetic (FM) layer on top of an MgO/FeCoB based magnetic tunnel junction (MTJ) so that the thickness of the storage layer becomes of the order or larger than the diameter of the MTJ pillar. In contrast to conventional spin transfer torque (STT) magnetic random access memory, wherein the demagnetizing energy opposes the interfacial perpendicular magnetic anisotropy (iPMA), in these novel memory cells, both PSA and iPMA contributions favor out-of-plane orientation of the storage layer magnetization. Using thicker storage layers in these PSA-STT-MRAM has several advantages. Thanks to this robust source of bulk anisotropy, PSA-STT-MRAM offers a greatly improved downsize scalability over conventional perpendicular p-STT-MRAM. Despite the large thickness of the storage layer, PSA-STT-MRAM cells can still be written by STT provided their thermal stability factor Δ is adjusted in the same range as in conventional p-STT-MRAM, i.e. Δ of the order of 60–100 depending on the memory capacity and required bit error rate. Moreover, a low damping material can be used for the thick FM material, thus leading to a reduction of the write current. Thanks to the PSA, very high and easily tunable thermal stability factors can be achieved, even down to sub-10 nm diameters. The paper describes this new PSA-STT-MRAM concept, practical realization of such memory arrays, magnetic characterization demonstrating thermal stability factor above 200 for MTJs as small as 8 nm in diameter and the possibility to maintain thermal stability factor above 60 down to 4 nm diameter. We also show that thanks to the increased thickness of the storage layer, the anisotropy and therefore the memory retention are much less sensitive on temperature than in conventional p-STT-MRAM. This is very interesting for applications operating on a wide range of temperatures (e.g. automotive −40 °C to +150 °C), as well as to fulfill solder reflow compliance.

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Temperature Dependence of Electrical Transport and Magnetization Reversal in Magnetic Tunnel Junction

Cited by 8 publications

References 16 publications

Effects of temperature on the magnetic tunnel junctions with periodic grating barrier

Effects of temperature on the magnetic tunnel junctions with periodic grating barrier

Compass Applications Using Giant Magnetoresistance Sensors (GMR)

Perpendicular shape anisotropy spin transfer torque magnetic random-access memory: towards sub-10 nm devices

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