2013
DOI: 10.7567/jjap.52.08jc01
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Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

Abstract: This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also… Show more

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Cited by 9 publications
(8 citation statements)
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“…35 He we report 4.7 ps.K À1 for theẼ==ỹ polarization and 3.1 ps.K À1 for theẼ==z polarization. We believe that these values are in concert with other experimentally measured values (for instance, see Cofdir et al 38 ) and are compatible with the predictions of the simple theory and deserve further studies. Obviously, the slope is a little bit smaller than the expected value probably because of the competition between the localized and delocalized excitons through the whole temperature range of this experiment.…”
Section: Time-resolved Photoluminescence Spectroscopysupporting
confidence: 89%
“…35 He we report 4.7 ps.K À1 for theẼ==ỹ polarization and 3.1 ps.K À1 for theẼ==z polarization. We believe that these values are in concert with other experimentally measured values (for instance, see Cofdir et al 38 ) and are compatible with the predictions of the simple theory and deserve further studies. Obviously, the slope is a little bit smaller than the expected value probably because of the competition between the localized and delocalized excitons through the whole temperature range of this experiment.…”
Section: Time-resolved Photoluminescence Spectroscopysupporting
confidence: 89%
“…blue shift with increasing temperature) for the low temperature range (4.2 and 77 K), which is an indication for exciton localization . In semiconductor materials excitons are localized at low temperatures and quasi‐free at high temperatures . Structural defects (e.g.…”
Section: Resultsmentioning
confidence: 93%
“…), nor the spectral shape (left panel in Fig. ) do change significantly when increasing the pulsed injection current at 4.2 K (which was applied in the range between 10 and 250 mA) . Due to the decreasing lifetime of bound excitons at 4.2 K the recombination occurs from low lying energy levels.…”
Section: Resultsmentioning
confidence: 96%
See 1 more Smart Citation
“…In particular, radiative recombination of localized carriers is expected to contribute significantly to the PL signal at low temperatures. When the temperature is increased, the carriers become more mobile and an increased number of them can be captured by non‐radiative centers . This results, on the other hand, in a shortening in the PL decay time.…”
Section: Resultsmentioning
confidence: 99%