Temperature dependence of heavy ion induced current transients in Si epilayer devices

Laird, J.S.; Hirao, Toshio; Onoda, Shinobu; Mori, Hidenobu; Itoh, Hisayoshi

doi:10.1109/radecs.2001.1159269

Cited by 11 publications

(13 citation statements)

References 21 publications

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“…At low to cryogenic temperatures, increased acoustic mobility decreases pulse width in drift dominated charge collection [9]. Guo et al measured the transient response at higher temperatures where pulse widths increase for both drift and diffusion dominated charge collection [10].…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Laird

Yuan

et al. 2009

IEEE Trans. Nucl. Sci.

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Spatially-resolved picosecond laser induced transients have been measured in a 0.18 m CMOS inverter test structure as a function of temperature. Sensitive -drain and -drain nodes have been scaled in size to accommodate characteristic differences between ion and laser tracks. Images based on pulse characteristics have been collected from 325 K to 400 K and transient currents extracted from laser strikes to both the OFF drain and its surroundings. With increasing temperature strikes to the OFF drain result in a pulse width which appears to broadens whilst the charge collected surprisingly decreases.

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Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Laird

Yuan

et al. 2009

IEEE Trans. Nucl. Sci.

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“…Previous works have shown that the magnitude and the width of SETs have to be significant enough to be propagated through a logic path [1,2,4,5]. Both duration and magnitude values of the SET depend on the heavy-ion Linear Energy Transfer (LET) [2] but it has also been experimentally observed distributions of pulse widths at a given LET [6,7] and supply voltage [8]. These results allows saying that the LET is not the only parameter able to modify the shape of the SETs pulses.…”

mentioning

confidence: 99%

“…Indeed, width and magnitude of transient pulses depend also on the ionizing particle impact location [9]. Moreover, simulation works on a Si p+/n/n+ diode have shown a significant temperature dependence of heavy-ion induced transient currents [8,10]. When the temperature increases, it was shown that the width of the ion induced transient current pulse increases and its 978-1-4244-1704-9/07/$25.00 ©2007 IEEE Iconsider the current pulse in Fig.…”

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confidence: 99%

Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain

Truyen¹,

Boch²,

Sagnes³

et al. 2007

2007 9th European Conference on Radiation and Its Effects on Components and Systems

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The ATLAS simulation tool from SILVACO is used for 3D simulations. This software solves the transient semiconductor device equations in three dimensions, including the Poisson equation and the current continuity equations. The technology modeled in this work is a CMOS Bulk 0.18 urn process manufactured by ATMEL and transistors are designed for 1.8 V operation bias. The 3D inverter is modeled on a p-type silicon substrate. The doping profiles have been obtained by process simulation with ATHENA in order to obtain a realistic inverter device. The 3D structure is in agreement with the layout dimensions of this technology as shown on Fig. 1. The size of the NMOS and PMOS transistor,W/L, is respectively 1.4 and 2. For all simulations, the following models were used: Fermi-Dirac statistics, bandgap narrowing effect (BGN), Shockley-ReadHall (SRH) and Auger recombination, impact ionization, and the Lombardi mobility [11] which takes into account the mobility variation with the normal and parallel electric field, doping concentration and temperature. In ATLAS, the magnitude decreases. Thus, one can presume that the wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SETs. In this paper, device simulations are performed at 218,300 and 418 K on a CMOS Bulk 0.18 urn inverter from ATMEL. We investigate the variations of the heavy-ions induced SETs for various impact locations at the three considered temperatures. This paper focuses on the voltage pulse width because its value is often used as a critical parameter in designing SET-mitigation circuits [2]. In the part II of the paper, the 3D modeled device and the simulation conditions are described. The part III shows the influence of the temperature on the SET pulse for a track crossing the off-NMOS drain (i.e. the sensitive region) and for a track striking the device far from this sensitive region. In the part IV, we complete the investigation with Spice simulations in order to define the implication of the temperature on the SETs propagation through a 10-inverters logic chain.Index Terms -Single event transient (SET), heavy-ion, temperature dependence, CMOS, LET, technology computeraided design (TCAD) simulation.Abstract-In this paper, a study by device simulation of the heavy-ion induced Single-Event Transients (SET) is realized in the 218 -418 K range in order to determine the temperature effect on a CMOS bulk 0.18 11m inverter. An investigation of the SET propagation though a 10-inverters logic chain is performed, and the threshold LET (LETth) required for unattenuated propagation through the inverters chain is determined. The LETth is calculated for two different location of the heavy ion impact and for three tern peratures. An increase of the sensitivity is found when the temperature raise from 218 to 418 K.

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“…The final source of PHDs is the bias tees used in the measurement circuit, which exhibit an 8% reflection coefficient for transient components faster than 200 ps. The reflection at bias tees would lead to a loss in the peak current and deterioration in overall charge collection [51]. We evaluated the loss in the measurement circuit of at least 5%.…”

Section: B Pulse Height Defectmentioning

confidence: 99%

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

Onoda

Ohshima

Hirao

et al. 2007

IEEE Trans. Nucl. Sci.

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Charge collection efficiency (CCE) generated in a 6H-SiC p + n diode by impact of heavy ions was evaluated by the transient ion beam induced current (TIBIC) technique. Numerical analysis by using technology computer aided design (TCAD) concludes that the Auger recombination process reduces CCE. Comparing experimentally measured CCEs with calculated ones revealed that the ambipolar Auger coefficient of about 3 10 29 cm 6 .

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Temperature dependence of heavy ion induced current transients in Si epilayer devices

Cited by 11 publications

References 21 publications

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

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Temperature dependence of heavy ion induced current transients in Si epilayer devices

Cited by 11 publications

References 21 publications

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Temperature Dependence of Spatially Resolved Picosecond Laser Induced Transients in a Deep Submicron CMOS Inverter

Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 &#x00B5;m inverters chain

Impact of Auger Recombination on Charge Collection of a 6H-SiC Diode by Heavy Ions

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Temperature effect on the heavy-ion induced Single-Event Transients propagation on a CMOS Bulk 0.18 µm inverters chain