Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films

Jung, Kiwon; Seo, Hongwoo; Kim, Yongmin; Im, Hyunsik; Hong, Jin Woo; Park, Jae-Wan; Lee, Jeon-Kook

doi:10.1063/1.2437668

Cited by 151 publications

(124 citation statements)

References 15 publications

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“…Nickel oxide is a Mott-type insulator that exhibits electroresistive switching properties [9,11], often interpreted with a filamentary conduction model [20]. Our previous results on TMR single junctions in Ni/NiO/Co nanowires showed that filamentary conduction indeed occurred in those very small junctions [15].…”

mentioning

confidence: 94%

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Sokolov

Sabirianov

et al. 2009

J. Phys.: Condens. Matter

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mentioning

confidence: 94%

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Sokolov

Sabirianov

et al. 2009

J. Phys.: Condens. Matter

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“…There are at least three reported RS types: (i) unipolar memory RS [3][4][5][6][7][8][9][10][11][12], (ii) unipolar threshold RS [11][12][13], and (iii) bipolar memory RS [14][15][16][17][18] The latter process is usually controlled by setting a limit to the total amount of current flow, the compliance current (I comp ), to prevent a complete dielectric breakdown. As these two states are stable at V = 0, they can be used in a nonvolatile memory device.…”

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confidence: 99%

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

et al. 2009

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We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture.

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“…According to this model, charge transport consists of two parts: weak filamentary channels current (I f ) and the current in bulk (I i ). In this model, when the temperature is below 250 K, I f dominates in HRS 28 , however, in the present case, since the measurements were conducted at room temperature, current in HRS goes with the SCLC principle. Ultimately, the conduction behaviors in both the LRS and HRS also suggest that the high conductivity in on-state device should be a confined, filamentary effect rather than a homogenously distributed one, hinting that the active region where the actual phenomena happens is much smaller than the device size.…”

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confidence: 82%

“…In the negative voltage sweeping region, the behavior in LRS is similar to the positive voltage sweep region, however, the variation in the HRS is different. Such behavior in HRS region can be explained by a model called weak filamentary conduction channels 28 . According to this model, charge transport consists of two parts: weak filamentary channels current (I f ) and the current in bulk (I i ).…”

mentioning

confidence: 99%

Resistive switching in ultra-thin La0.7Sr0.3MnO3/SrRuO3 superlattices

Jammalamadaka

Vanacken

Moshchalkov

2014

Applied Physics Letters

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Superlattices may play an important role in next generation electronic and spintronic devices if the key-challenge of the reading and writing data can be solved. This challenge emerges from the coupling of low dimensional individual layers with macroscopic world. Here we report the study of the resistive switching characteristics of a of hybrid structure made out of a superlattice with ultrathin layers of two ferromagnetic metallic oxides, La 0.7 Sr 0.3 MnO 3 (LSMO) and SrRuO 3 (SRO). Bipolar resistive switching memory effects are measured on these LSMO/SRO superlattices, and the observed switching is explainable by ohmic and space charge-limited conduction laws. It is evident from the endurance characteristics that the on/off memory window of the cell is greater than 14, which indicates that this cell can reliably distinguish the stored information between high and low resistance states. The findings may pave a way to the construction of devices based on nonvolatile resistive memory effects. Figure 1. Misfit dislocations were found at the interfaces between the La 0.7 Sr 0.3 MnO 3 and SrRuO 3 layers. However, the interfacial atomic layers were affected by intermixing; both A-site (La/Sr) and B-site (Mn/Ru) cations intermix in 1-2 unit cells across the interface, as marked by the rectangles in Fig 1(b). The contacts ( Fig. 1(a)) to the top layer were made by the wire bonder, the distance between two planar electrodes is 1 mm. KeywordsUsing Keithley 2400, two probe method was employed in order to measure I -V characteristics.All the measurements were carried out at room temperature. Top SRO layer showed the resistance ~ KΩ. At this point it is worth quoting about the nature of SRO layer with different superlattice structures where essentially SRO layer behaved vividly in its bulk and ultra-thinfilm form. On top of that in general an important issue on using ultrathin films of metal oxides is the significant enhancement in the resistivity, which has been clearly manifested in SRO thin films [19][20][21][22] .Before the forming process, resistive switching at low voltages is not consistently observed in LSMO/SRO superlattice, between -1 V and +1 V. In order to make filaments between the electrodes, I -V characteristics were measured by sweeping voltage from 0 to 20 V with a current compliance of 10 mA. Essentially, the electro-forming process is necessary to get a stable and reproducible resistive switching behavior in the resistive switching devices. Compliance current of 10 mA is used to avoid the dielectric break down of the device during the forming process due to leakage current which may arise by the application of very high voltages.Essentially, during this process, current -limited electric breakdown is induced in the Fig. 2(b) shows the same graph in logarithmic plot. As soon as we increased the compliance limit until 100 mA, we could see dielectric breakdown in the device. Hence, we fixed the compliance limit to 10 mA for all the devices.To probe the current conduction mechanism of LSMO/SRO superlattice...

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Temperature dependence of high- and low-resistance bistable states in polycrystalline NiO films

Cited by 151 publications

References 15 publications

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

Resistive switching in ultra-thin La0.7Sr0.3MnO3/SrRuO3 superlattices

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