Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode

Duman, S.; Ejderha, Kadir; Orak, İkram; Yıldırım, N.; Türüt, A.

doi:10.1007/s10854-020-04638-3

Cited by 6 publications

(2 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…However, it is observed that values of the barrier height obtained from the C – V measurement are greater than the values of barrier height obtained from the I – V measurement. This difference is attributed to the inhomogeneities in the interfacial layer of MS Schottky junction and different analytical approaches. − Further, the temperature-dependent conductance–voltage ( G – V – T ) plot of the In/p-WS 2 Schottky barrier diode is recorded in the range of 60–300 K at 1 MHz frequency as shown in Figure b. Here, it is noticed that conductance decreases with the decreasing temperature that reflects the diode’s semiconducting nature and its NTC characteristics.…”

Section: Resultsmentioning

confidence: 99%

Superior Cryotronics Performance of the In/p-WS₂ Schottky Interface

Dalvaniya

Gupta

Patel

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Transition metal dichalcogenides (TMDCs) have shown tremendous potential in high-performance cryotronics applications. In particular, in the semiconductor industry, TMDC-based Schottky barrier devices are in demand due to their low turn-on voltage that also remains effectual at low-temperature conditions. However, cryogenic temperature dependent electrical characteristics of Schottky device have only rarely been explored previously but with limited discussion. In the present article, the electrical characteristics of In/p-WS 2 Schottky devices are studied comprehensively for their cryotronics application. A WS 2 single crystal was grown by the direct vapor transport (DVT) technique. It is well characterized by EDAX, PXRD, and SEM in which the highly pure and crystalline nature of WS 2 crystal is observed with hexagonal layered growth. A Hall effect measurement confirmed the p-type nature. Thermally evaporated indium thin films onto WS 2 crystal showed a rectifying nature, having good Schottky characteristics. For the analytical study of Schottky device parameters, current−voltage (I−V), capacitance−voltage (C−V) and conductance−voltage (G−V) measurements have been carried out in the temperature range of 300−60 K with a 40 K step. Herein, as an outcome of the present study, remarkable Schottky characteristics are demonstrated with an ideality factor of 1.59, and an efficient device performance at 60 K makes In/p-WS 2 suitable for future cryotronics applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Superior Cryotronics Performance of the In/p-WS₂ Schottky Interface

Dalvaniya

Gupta

Patel

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Elektronikte ve optoelektronikte çok önemli ve geniş kullanım alanı bulunan diyotlar üzerinde çeşitli araştırmalar yoğun bir şekilde sürdürülmektedir [1][2][3][4][5][6][7]. Metal oksit ince filmler de özellikle güneş pilleri üretiminde, yarıiletken ve ışığı geçirgen yapısıyla diyot yapılarında pencere materyali olarak kullanılmaktadır.…”

Section: Introductionunclassified

Ni/n-GaAs ve NiO/n-GaAs Diyotların Elektriksel Parametreleri Arasındaki İlişki

Özkartal

Noori

2021

Bitlis Eren Üniversitesi Fen Bilimleri Dergisi

View full text Add to dashboard Cite

ÖzBu çalışmada, Ni/n-GaAs Schottky ve p-NiO/n-GaAs heteroeklem diyotları termal buharlaştırma yöntemi ile üretilmiştir. Üretilen numunelerin elektriksel özellikleri karanlıkta ve oda sıcaklığında, akım-voltaj (I-V) ve kapasitans-voltaj (C-V) ölçümleri ile incelenmiştir. Üretilen numunelerin idealite faktörü (n), engel yüksekliği (Фb) ve seri direnci (Rs), I-V ve C-V ölçümlerinden ayrı ayrı hesaplanmıştır. Ayrıca Cheung fonksiyonları yardımıyla da n, Фb ve Rs hesaplanarak sonuçların kararlılığı tespit edilmiştir. Schottky diyot yapısının, p-n diyot yapısından daha iyi idealite faktörüne ve daha düşük engel yüksekliğine sahip olduğu belirlenmiştir.

show abstract