Temperature dependence of photoluminescence from InAsP/InP strained quantum well structures grown by metalorganic chemical vapor deposition

Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts

“…These calculated transition energies are in good agreement with the experimental data shown in figures 2(c) and 3(a). For direct comparison to the low temperature data in figure 2(d), a thermal Varshni-type blue-shift of 120 meV needs to be added to these simulated values [21]. The intersubband matrix elements show non-zero entries only for the out-of plane polarization with the transition E C2 -E C1 at an energy of 130 meV in good agreement with the experimental results in figure 3.…”

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

“…The PL FWHM of plasma-etched sample is obviously wider than that of the as-grown sample, especially when the temperature is below 70 K. In general, the luminescence line shape is a convolution of an inhomogeneous part and a temperature dependent homogeneous part. Interface roughness and random alloy disorder mainly contribute to the inhomogeneous line-width in the strained quantum well structure, especially in the low-temperature range [28]. There is more alloy disorder inside plasma-etched samples compared to as-grown samples.…”

Optical and transport properties correlation driven by amorphous/crystalline disorder in InP nanowires

“…In order to describe the dependence of exciton transition/band gap energies on temperature, different models have been proposed, for example, the ones developed by Varshni, Vinã and Pässler [37][38][39][40]. Sometimes these models have limitations to describe the gap versus temperature behavior in semiconductor when different scattering mechanism in the material modulates the band structure and leads to unusual temperature dependent recombination process [41,42], like the S and V-shape reported in many works, including bulk, quantum wells and quantum wires nanostructures [43][44][45][46]. At low excitation power and low temperature regimes, the photo-excited carriers are subject to the influence of potential fluctuation resulting from imperfections during of growth, like intermixing of material along the interfaces, defects, segregation an diffusion of atoms along the lattice [47,48].…”