Temperature dependence of photoluminescence of semiconductor quantum dots upon indirect excitation in a SiO2 dielectric matrix

Influence of an External Electric Field and Dissipative Tunneling on Recombination Radiation in Quantum Dots

“…As it has been mentioned above, it is important to take into account the temperature dependence of the photoluminescence of the quantum dots under consideration [ 13 , 14 , 15 , 16 , 17 , 20 , 21 ]. Let us further consider problem of the hole quasistationary states in an impurity complex in the semiconductor spherically symmetric QD.…”

“…Exploring dependence of the impurity complex binding energy on such parameters of the matrix, surrounding the quantum dot, as temperature, the strength of the external electric field, the frequency of phonon modes, and the coupling constant with the contact medium (or with the heat-bath), is very important. It is also important to take into account the temperature dependence of the photoluminescence of the quantum dots under consideration [13][14][15][16][17]. As is known [18,19], for most semiconductor materials, the most significant contribution to the temperature dynamics of these QD's energy levels is made by the electron-phonon interaction ( [18,19]).…”