Temperature dependence of photoluminescence of n-InGaAsP

Abstract

The temperature dependence (from 6 to 300 K) of the near band gap photoluminescence (PL) of n-type InGaAsP is investigated. These layers, epitaxially grown on InP substrates, span the entire range of lattice matched compositions of the quaternary alloy. The spectral width of the PL emission and its temperature dependence are found not to vary with composition. However, compositional grading, especially evident at the center of the InGaAsP alloy range, often results in significant linewidth increase. These results are correlated with double crystal x-ray diffraction measurements. The experimental results are compared with predictions of van Roosbroeck–Shockley formalism.

Wavelength chirp and dependence of carrier temperature on current in MQW InGaAsP-InP lasers

“…In order to obtain the value of -, the derivative with respect to the carrier temperature, we need to exclude the effect of lattice heating. This can be done by taking into account the fact that the lattice heating causes bandgap energy reduction at the rate of approximately 4Å/K [24], [25]. We also measured the shift of the electroluminescence inflection point for the test sample and obtained the same result.…”

Investigation of Anomalous Optical Characteristics of InGaAsP Layers on GaAs Substrates Grown by Metalorganic Vapor Phase Epitaxy

“…On the other hand, the surface roughnesses of all the samples grown on 10 off substrates are larger than a few nanometers, and increase with the decrease in y (As). Figure 4 shows the y (As) dependence of PL linewidth measured at 7 K. According to Temkin et al, 21) the PL linewidth of InGaAsP shows little dependence on crystal composition and is approximately 10 meV at 7 K if no phase separation occurs. The PL linewidth of A1 is sufficiently small (6 meV); thus, no phase separation occurs for this sample (x ¼ 0:83 and y ¼ 0:73).…”

Thermal effects in monolithically integrated tunable laser transmitters

“…Thermal shrinkage of the bandgap will cause this absorption to increase by bringing the optical energy closer to the bandgap, thus increasing the tunneling probability. The bandgap variation with temperature is described empirically by the Varshni equations [12]. Combining these formulae, absorption characteristics can be calculated for the InGaAsP waveguide used in this device.…”

“…This one-dimensional model calculates optical power absorption, local photocurrent, and local temperature self-consistently using the Varshni equations for thermal bandgap shrinkage [12]. Fig.…”