Temperature Dependence of the Address Discharge at High Temperature in an AC-PDP

Kim, Gun-Su; Lee, Seok-Hyun

doi:10.1109/tps.2010.2076367

Cited by 11 publications

(3 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Improved radial uniformity has been demonstrated by using C-type ferrite enhancement in inductively coupled plasmas (ICPs) [7]. Various other configurations of plasma sources such as CCPs, very high frequency capacitively coupled plasmas (VHF-CCPs) and ICPs (ferrite core assisted and dual-comb-type antennas) have been proposed and investigated [8][9][10][11][12][13][14][15]. Large-area plasma sources are also important in fusion machines.…”

Section: Introductionmentioning

confidence: 99%

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Mishra¹,

Seo²,

Kim³

et al. 2013

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Using an emissive probe technique in 'saturated floating-potential' mode, an investigation of temporal evolution of plasma potential (V p) in a large-area pulsed dual-frequency (2 MHz/13.56 MHz) inductively coupled plasma (p-DF-CCP) is carried out. The discharge is sustained by an external type ICP antenna at a pressure of 10 mTorr in argon gas environment. The 2 MHz rf is pulsed at a frequency of 1 kHz and a duty ratio of 50%. The emissive probe is located at the centre of the substrate and 20 mm above (r = 00 mm and z = −20 mm) it. The low-frequency power (P 2 MHz) is varied from 100 to 800 W, whereas the high-frequency power (P 13.56 MHz) from 100 to 700 W. V p remains positive during the whole pulse period. The prominent features in the V p profile remain similar under all operating conditions; however, the magnitude of V p depends on the applied rf powers. For further investigation, three distinct regions in a typical V p profile are clearly identified as 'overshoot-immediately after pulse begins', the 'on-time' and the 'off-time'. V p increases with increasing P 13.56 MHz and has reverse trend with P 2 MHz. The electron temperature (T e) is calculated using the relation between floating potential (V f) and plasma potential (V p) for the argon plasma and it is found that T e increases with increasing P 13.56 MHz and decreases with P 2 MHz. It is found that V p could be modulated using a suitable power combination on two frequencies (P 13.56 MHz /P 2 MHz). This paper is an attempt to investigate the time-resolved V p and T e with rf powers in a pulsed dual-frequency ICP.

show abstract

Section: Introductionmentioning

confidence: 99%

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Mishra¹,

Seo²,

Kim³

et al. 2013

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…T f decreases as V priming increases because of stronger priming effect. When V priming is further increased, T f rapidly increases because priming discharge rapidly builds up to glow discharge and more wall charges are eliminated by recombination . On the other hand, effect of shortening the discharge delay becomes small as τ priming increases.…”

Section: Address Discharge Delaymentioning

confidence: 99%

High‐speed and low‐voltage write addressing of plasma display panels by use of extremely weak discharge

Yoshita

Shiga

2013

J Soc Info Display

View full text Add to dashboard Cite

Although the priming effect shortens address period and reduces address voltage, it is difficult to use the priming effect for the conventional write addressing method because the ramp reset pulses provide little priming effect. An extremely weak discharge for priming has been incorporated with write addressing method. The extremely weak discharge is generated by priming pulse applied just prior to the scan pulse. In the 4-in-diagonal test panel containing Ne + 10%Xe mixture gas, infrared emission intensity of the discharge is 900 times smaller than that of sustain discharge. Therefore, there is no degradation of dark room contrast ratio. Because the priming discharge generates a very small amount of charges, there is little reduction in the amount of wall charge accumulated during reset period. Namely, increase in address voltage can be avoided. Although the discharge intensity is extremely low, it provides sufficient priming particles for high-speed and low-voltage addressing. When priming pulse voltage is 70 V and width is 10 μs, the address discharge delay is reduced to less than half. When the scan voltage margin is 10 V, the data voltage is reduced to 17 V, which is 20 V lower than that of conventional method.

show abstract

“…Device fabrication on large-area wafers poses a significant challenge to precisely control the distribution of plasma species over the substrate. Over the last decade, many types of high-density and large-area plasma sources, based on different mechanisms of electromagnetic coupling to discharge and geometrical configurations, have been extensively investigated [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Due to the ability of being operated at low pressures (<10 mTorr) owing to strong power coupling through electromagnetic fields, high plasma density, easy plasma uniformity control and the separation between discharge production and ion acceleration mechanism, ICP sources have attracted significant research interest as potential large-area plasma sources.…”

Section: Introductionmentioning

confidence: 99%

Mass spectrometric study of discharges produced by a large-area dual-frequency–dual-antenna inductively coupled plasma source

Mishra¹,

Kim²,

Kim³

et al. 2012

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

An energy-resolved quadrupole mass spectrometer is used to investigate the time-averaged ion energy distribution (IED) of positive ionic species in an Ar/CF 4 (90%/10%) discharge produced by dual-frequency-dual-antenna, next-generation large-area inductively coupled plasma source. The operating pressure is 10 mTorr. Two radio frequencies of 2 MHz (low frequency) and 13.56 MHz (high frequency) are used to initiate and sustain the discharge. The orifice of the mass spectrometer was 100 µm in diameter and placed at 30 mm below the ICP source and 20 mm outside the discharge volume.It is observed that both of the frequencies have significant effect on IEDs of all prominent discharge species. The evolution of IEDs with power shows that the discharge undergoes a mode transition (E to H) as the applied power is increased. At a fixed value of P 13.56 MHz (250 and 500 W), the energy spread and the energy separation between two peaks of IEDs increase illustrating enhanced E-mode. Above P 13.56 MHz = 500 W, the IEDs show opposite trends, i.e. decreasing energy spread and energy separation between two peaks, showing the strengthening of H-mode. Increasing P 13.56 MHz at a fixed value of P 2 MHz has similar effects. A comparison of IEDs sampled at a fixed total power (P 13.56 MHz + P 2 MHz ) demonstrates that an IED can be tailored by changing the power ratio (P 13.56 MHz/P 2 MHz).

show abstract

Temperature Dependence of the Address Discharge at High Temperature in an AC-PDP

Cited by 11 publications

References 5 publications

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

Temporal evolution of plasma potential in a large-area pulsed dual-frequency inductively coupled discharge

High‐speed and low‐voltage write addressing of plasma display panels by use of extremely weak discharge

Mass spectrometric study of discharges produced by a large-area dual-frequency–dual-antenna inductively coupled plasma source

Contact Info

Product

Resources

About