Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content

Castro, R. A.; Bordovskii, V. A.; Грабко, Г. И.

doi:10.1134/s1063785010100275

Cited by 2 publications

(2 citation statements)

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“…One of the sensitive and informative methods for studying such complex low-dimensional systems is impedance spectroscopy in a wide frequency range [ 38 , 39 , 40 , 41 , 42 , 43 ]. Especially important for the study of electronic processes, possible migration of ions, etc., is impedance spectroscopy at low frequencies in the presence of a constant component of the electric field.…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

et al. 2021

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The spectra of dielectric relaxation of macroporous silicon with a mesoporous skin layer in the frequency range 1–106 Hz during cooling (up to 293–173 K) and heating (293–333 K) are presented. Macroporous silicon (pore diameter ≈ 2.2–2.7 μm) with a meso-macroporous skin layer was obtained by the method of electrochemical anodic dissolution of monocrystalline silicon in a Unno-Imai cell. A mesoporous skin layer with a thickness of about 100–200 nm in the form of cone-shaped nanostructures with pore diameters near 13–25 nm and sizes of skeletal part about 35–40 nm by ion-electron microscopy was observed. The temperature dependence of the relaxation of the most probable relaxation time is characterized by two linear sections with different slope values; the change in the slope character is observed at T ≈ 250 K. The features of the distribution of relaxation times in meso-macroporous silicon at temperatures of 223, 273, and 293 K are revealed. The Havriliak-Negami approach was used for approximation of the relaxation curves ε″ = f(ν). The existence of a symmetric distribution of relaxers for all temperatures was found (Cole-Cole model). A discussion of results is provided, taking into account the structure of the studied object.

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Section: Introductionmentioning

confidence: 99%

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

et al. 2021

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“…Тем не менее, именно эта область частот является наиболее интересной, т. к. большинство релаксационных процессов проявляют себя в этом диапазоне частот. Исследования такого рода могут быть осуществлены с применением спектрометра Concept-81 фирмы Novocontrol Technologies [11][12]. Установка состоит из частотного анализатора импеданса, измерительной ячейки, системы автоматического сбора данных с компьютерным интерфейсом, и позволяет проводить анализ диэлектрических и электропроводящих свойств материалов в диапазоне частот от 6 10  Гц до 9 10 Гц и температур от 173 К до 523 К. При таких метрологических возможностях можно выявить особенности поляризационных процессов в широком классе материалов, например ионной проводимости и др.…”

Section: Introductionunclassified

Dielectric Relaxation in Por-Si Layers at Low Frequencies

Спивак¹,

Кастро²,

Севрюгина³

et al. 2020

Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials

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Методом электрохимического анодного травления получен макропористый кремний с высокоомным мезопористым наноструктурированным «скин»-слоем на поверхности. Измерения частотных зависимостей диэлектрических коэффициентов полученных слоев пористого Si выполнены в частотном интервале 5⋅10 < f < 10 Гц при температуре 295 К и приложенном напряжении 1 В. Выявлен максимум тангенса угла диэлектрических потерь, который, наиболее вероятно, обусловлен преобладанием дипольно-релаксационного механизма поляризации. Обнаружено распределение релаксаторов по временам релаксации, предложена интерпретация полученных результатов с точки зрения строения пористого слоя. Macroporous silicon with a mesoporous nanostructured surface layer on top was obtained by the method of electrochemical anodic etching. The frequency dependences of the dielectric coefficients for porous Si layers were measured in the frequency range 5⋅10 < f < 10 Hz at a temperature of 295 K and an applied voltage of 1 V. A maximum of the dielectric loss tangent is revealed, which is most likely due to the predominance of the dipole relaxation mechanism of polarization. The distribution of relaxers over relaxation times has been. An interpretation of the results obtained from the point of view of the structure of the porous layer is proposed.

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Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content

Cited by 2 publications

References 4 publications

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

Low-Frequency Dielectric Relaxation in Structures Based on Macroporous Silicon with Meso-Macroporous Skin-Layer

Dielectric Relaxation in Por-Si Layers at Low Frequencies

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