Temperature dependence of the direct gaps of ZnSe and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mn>0.56</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>0.44</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:mat

Malikova, L.; Krystek, Wojciech; Pollak, Fred H.; Dai, Ning; Cavus, A.; Tamargo, M. C.

doi:10.1103/physrevb.54.1819

Cited by 133 publications

(95 citation statements)

References 22 publications

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“…The variation profiles of the emissions with temperatures increasing are plotted in Figure 4b. The energy variation trend of near band-edge emission with temperature is consistent with the Varshni function [38], as shown by the red line of Figure 4b. With increasing temperature, the intensities of near band-edge emission (black curve), D1 (blue curve), and D2 (green curve) emission decrease, which is due to the increasing of phonon scattering at high temperature and energy loss by thermal quenching [39].…”

Section: Resultssupporting

confidence: 83%

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

et al. 2016

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Spin-related emission properties have important applications in the future information technology; however, they involve microscopic ferromagnetic coupling, antiferromagnetic or ferrimagnetic coupling between transition metal ions and excitons, or d state coupling with phonons is not well understood in these diluted magnetic semiconductors (DMS). Fe 3+ doped ZnSe nanoribbons, as a DMS example, have been successfully prepared by a thermal evaporation method. Their power-dependent micro-photoluminescence (PL) spectra and temperature-dependent PL spectra of a single ZnSe:Fe nanoribbon have been obtained and demonstrated that alio-valence ion doping diminishes the exciton magnetic polaron (EMP) effect by introducing exceeded charges. The d-d transition emission peaks of Fe 3+ assigned to the 4 T 2 (G) → 6 A 1 (S) transition at 553 nm and 4 T 1 (G) → 6 A 1 (S) transition at 630 nm in the ZnSe lattice have been observed. The emission lifetimes and their temperature dependences have been obtained, which reflected different spin-phonon interactions. There exists a sharp decrease of PL lifetime at about 60 K, which hints at a magnetic phase transition. These spin-spin and spin-phonon interaction related PL phenomena are applicable in the future spin-related photonic nanodevices.

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Section: Resultssupporting

confidence: 83%

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

et al. 2016

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“…The variation of the band-gap energy with temperature induced by thermal expansion, ∆E th (T ), can be written as [8,[33][34][35]:…”

Section: Theoretical Modelsmentioning

confidence: 99%

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

et al. 2004

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Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansion contribution on the temperature dependence of excitonic transitions for different aluminum concentrations in the AlxGa1−xAs alloy is presented. Results from this study have shown that the negative thermal expansion (NTE) in the AlxGa1−xAs alloy, in the low temperature interval, induces a small blueshift in the optical transition energy. In the temperature range from ∼23 to ∼95 K there is a competition between the NTE effect and the electron-phonon interaction. Using the thermal expansion coefficient in the 2 -300 K temperature range, the thermal expansion contribution to GaAs, at room temperature, represents 21% of the total shift of the excitonic transition energy. After subtracting the thermal expansion contribution from the experimental temperature dependence of the excitonic transitions, in the AlxGa1−xAs alloy, the contribution to the electron-phonon interaction of the longitudinal optical phonon increases, relatively to the longitudinal acoustical phonon, with increasing Al concentration.

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“…The value of a compares well with that found for bulk ZnSe (7.5 ] 10~4 eV K~1) and the value of b is slightly larger than that reported for bulk ZnSe (295 K). 27 The larger value of b might be explained by noting that b is a Fig. 4 Temperature-dependent PL spectra for the ZnSe : 0.7% Mn2s ample.…”

Section: Temperature Dependencementioning

confidence: 99%

Luminescence of nanocrystalline ZnSe:Mn2+

Suyver

Wuister

Kelly

et al. 2000

Phys. Chem. Chem. Phys.

220

222

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First published as an Advance Article on the web 9th 2000 No¿emberThe luminescence properties of nanocrystalline ZnSe : Mn2`prepared via an inorganic chemical synthesis are described. Photoluminescence spectra show distinct ZnSe and Mn2`related emissions, both of which are excited via the ZnSe host lattice. The Mn2`emission wavelength and the associated luminescence decay time depend on the concentration of Mn2`incorporated in the ZnSe lattice. Temperature-dependent photoluminescence spectra and photoluminescence lifetime measurements are also presented and the results are compared with those of Mn2`in bulk ZnSe.

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Temperature dependence of the direct gaps of ZnSe andZn0.56Cd0.44

Cited by 133 publications

References 22 publications

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

Spin-Related Micro-Photoluminescence in Fe3+ Doped ZnSe Nanoribbons

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

Luminescence of nanocrystalline ZnSe:Mn2+

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