Temperature Dependence of the Effective Masses in III–V Semiconductors

Hazama, H.; Sugimasa, Tetsuya; Imachi, Tadasi; Hamaguchi, Chihiro

doi:10.1143/jpsj.55.1282

Cited by 37 publications

(9 citation statements)

References 29 publications

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“…One should add that, taking the thermal change of gap due to the dilatation alone, Litvinenko et al [4] were able to account correctly for the temperature dependence of the electron spin splitting in InSb. All this, together with the published analysis of m * (T ) in GaAs [14,15], strongly confirms that both orbital and spin quantizations of the electron spectrum in a magnetic field are governed by the change of the energy gap due to lattice dilatation alone.…”

Section: Resultssupporting

confidence: 71%

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Temperature dependence of the electron spingfactor in GaAs

et al. 2008

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The temperature dependence of the electron spin g factor in GaAs is investigated experimentally and theoretically. Experimentally, the g factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins in the temperature range between 4.5 K and 190 K. The experiment shows an almost linear increase of the g value with the temperature. This result is in good agreement with other measurements based on photoluminescence quantum beats and timeresolved Kerr rotation up to room temperature. The experimental data are described theoretically taking into account a diminishing fundamental energy gap in GaAs due to lattice thermal dilatation and nonparabolicity of the conduction band calculated using a five-level k·p model. At higher temperatures electrons populate higher Landau levels and the average g factor is obtained from a summation over many levels. A very good description of the experimental data is obtained indicating that the observed increase of the spin g factor with the temperature is predominantly due to band's nonparabolicity.

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Section: Resultssupporting

confidence: 71%

“…Now we turn to the temperature dependence of the fundamental gap E 0 . It was argued a long time ago [13] and confirmed by the behavior of the effective mass [14,15] that the temperature dependence of the band parameters is governed by a dilatational change of the energy gap E 0 and not by its total (i.e. measured) change.…”

Section: Experiments and Theorymentioning

confidence: 96%

Temperature dependence of the electron spingfactor in GaAs

et al. 2008

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“…The k · p theory can describe quite well a wide range of low-temperature experimental results. When increasing temperature, however, discrepancies between the measured effective masses and Landé g-factor in GaAs and the corresponding predictions of the temperature-independent k·p theory have been observed (Hopkins et al, 1987;Hazama et al, 1986;Oestreich and Rühle, 1995;Hübner et al, 2006).…”

Section: H Spin-orbit Interaction: Temperature Effectsmentioning

confidence: 93%

“…The Dresselhaus parameter, on the other hand, exhibits an oscillating behavior. In particular, it has been experimentally observed that both the energy gap E 0 (Lautenschlager et al, 1987) and the effective mass m * (Hazama et al, 1986;Hopkins et al, 1987) in systems such as GaAs decrease when the temperature increases. Consequently, we can expect from our qualitative analysis an increase of the Bychkov-Rashba parameter with the temperature.…”

Section: Parametermentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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“…The dilatational change in the fundamental energy gap of InP was estimated by Hazama et al 4 . However, we revise this estimation because a part of the procedure adopted in Ref.…”

Section: Inpmentioning

confidence: 99%

Temperature dependence of the electron spin g factor in CdTe and InP

Pfeffer

Zawadzki

2012

Journal of Applied Physics

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Temperature dependence of the electron spin g factors in bulk CdTe and InP are calculated and compared with experiment. It is assumed that the only modification of the band structure related to temperature is a dilatation change in the fundamental energy gap. The dilatation changes of fundamental gaps are calculated for both materials using available experimental data. Computations of the band structures in the presence of a magnetic field are carried out employing five-level P·p model appropriate for medium-gap semiconductors. In particular, the model takes into account spin splitting due to bulk inversion asymmetry (BIA) of the materials. The resulting theoretical effective masses and g factors increase with electron energy due to band nonparabolicity. Average g values are calculated summing over populated Landau and spin levels properly accounting for the thermal distribution of electrons in the band. It is shown that the spin splitting due to BIA in the presence of magnetic field gives observable contributions to g values. Our calculations are in good agreement with experiment in the temperature range of 0 K to 300 K for CdTe and 0 K to 180 K for InP. The temperature dependence of g is stronger in CdTe than in InP due to different signs of the bandedge g values in the two materials. Good agreement between the theory and experiment strongly indicates that the temperature dependence of spin g factors is correctly explained. In addition, we discuss formulas for the energy dependence of spin g factor due to band nonparabolicity, which are liable to misinterpretation.

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Temperature Dependence of the Effective Masses in III–V Semiconductors

Cited by 37 publications

References 29 publications

Temperature dependence of the electron spingfactor in GaAs

Temperature dependence of the electron spingfactor in GaAs

Semiconductor spintronics

Temperature dependence of the electron spin g factor in CdTe and InP

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