Temperature dependence of the fast, near-band-edge scintillation from CuI, HgI2, PbI2, ZnO:Ga and CdS:In

Derenzo, Stephen E.; Weber, Marvin J.; Klintenberg, Mattias

doi:10.1016/s0168-9002(02)00705-2

Cited by 193 publications

(94 citation statements)

References 17 publications

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“…Such ultra-fast luminescence has recently been observed in undoped CuI, HgI 2 , and PbI 2 , and plots showing the decay lifetime of these materials are displayed in Figure 4 [18]. These emissions are observed at cryogenic temperatures, but are quenched at room temperature.…”

Section: Scintillation From Wide Band-gap Semiconductorsmentioning

confidence: 62%

Current trends in scintillator detectors and materials

Moses

2002

Nuclear Instruments and Methods in Physics Research Section A:

235

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The last decade has seen a renaissance in inorganic scintillator development for gamma ray detection. Lead tungstate (PbWO 4 ) has been developed for high energy physics experiments, and possesses exceptionally high density and radiation hardness, albeit with low luminous efficiency. Lutetium orthosilicate or LSO (Lu 2 SiO 5 :Ce) possesses a unique combination of high luminous efficiency, high density, and reasonably short decay time, and is now incorporated in commercial positron emission tomography (PET) cameras. There have been advances in understanding the fundamental mechanisms that limit energy resolution, and several recently discovered materials (such as LaBr 3 :Ce) possess energy resolution that approaches that of direct solid state detectors. Finally, there are indications that a neglected class of scintillator materials that exhibit near bandedge fluorescence could provide scintillators with sub-nanosecond decay times and high luminescent efficiency.

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Section: Scintillation From Wide Band-gap Semiconductorsmentioning

confidence: 62%

Current trends in scintillator detectors and materials

Moses

2002

Nuclear Instruments and Methods in Physics Research Section A:

235

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“…1b). These changes are due to the change in the luminescence mechanism: the exciton luminescence is suppressed at room temperature and emission occurs between donor (gallium) levels and valence-band holes [3,9]. The wide band in the visible spectral range (Fig.…”

mentioning

confidence: 99%

Luminescence of a ZnO:Ga crystal upon excitation in vacuum UV region

Родный¹,

Stryganyuk

Khodyuk³

2008

Opt. Spectrosc.

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Zinc oxide has been actively investigated since it has a number of interesting physical properties as a widegap ( E g = 3.4376 eV at 4.2 K) semiconductor with a significant ionic-bonding component [1]. The prospects of application of ZnO and ZnO:Ga in short-wavelength optoelectronics and laser and scintillation technique were considered in [2][3][4]. Photoluminescence investigations, performed on thin films [2,3], ceramics [4], nanopowders [5], and single crystals [6][7][8] showed that zinc oxide exhibits a narrow UV line peaking near 3.3 eV and a wide long-wavelength ( ~2.2 eV) emission band. The narrow UV line has an exciton nature, while the long-wavelength band is attributed to recombination of electrons with oxygen vacancies [5]. Most investigations of the ZnO photoluminescence were performed upon excitation by a He-Cd laser (325 nm) [5][6][7][8]. In this study, the spectral-kinetic characteristics of a ZnO:Ga single crystal excited by vacuum UV (VUV) radiation were investigated.Measurements were performed on a small (approximately 4 × 1.5 × 1 mm) ZnO:Ga single crystal with a gallium concentration of 10 18 cm -3 . The excitation and emission spectra of ZnO:Ga were measured at temperatures of 8 and 300 K at the Synchrotron Radiation Laboratory HASYLAB (DESY, Hamburg), using the experimental equipment of the SUPERLUMI station. The luminescence spectra were recorded using a monochromator with the best resolution (for low-temperature measurements): 2 meV. The luminescence excitation spectra were measured in the range from 4 to 12.5 eV (resolution 3.2 Å) using an R6358P photomultiplier (Hamamatsu) on a secondary monochromator. In measurements of kinetic curves, the excitation pulse width was 290 ps. Figure 1 shows the crystal luminescence spectra measured upon excitation by 6.89-eV photons at temperatures of 8 and 300 K (Figs. 1a and 1b, respectively). The low-temperature spectrum contains a very narrow (width at half-maximum 7.2 meV) line peaking at 3.356 eV (Fig. 1 ‡, inset) and a wide band peaking near 2.0 eV. The narrow 3.356-eV UV line is due to free excitons in zinc oxide. The weak peak at 3.214 eV should be attributed to the superposition of a free exciton and two longitudinal optical (LO) phonons, since the energy of LO phonons in ZnO is 72 meV [7]. The wide band is red-shifted in comparison with the similar band in ZnO nanocrystals. It is believed that this band is due to several types of electron recombination: at oxygen and zinc vacancies and at interstitial zinc [8].At room temperature, the UV line is red-shifted ( h ν max = 3.3 eV) and broadened (Fig. 1b). These changes are due to the change in the luminescence mechanism: the exciton luminescence is suppressed at room temperature and emission occurs between donor (gallium) levels and valence-band holes [3,9]. The wide band in the visible spectral range (Fig. 1b) peaks at 2.1 eV and has a feature near 2.3 eV.The reflection and luminescence excitation spectra of a ZnO:Ga crystal are shown in Fig. 2. The excitation spectra exhibit peaks near 6.0, 7.8, ...

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“…Such an equipment may be available soon as a result of the contemporary progress in the development of fast high-energy-resolution detectors and analyzers of gamma photons [30][31][32] …”

Section: Discussionmentioning

confidence: 99%

“…Such an energy resolution of detecting 170 keV gamma photons is achievable, e.g., by lanthanium-based scintillation detectors [30], but at the expense of lower temporal resolution and timing accuracy of the photon count pulses. The contemporary scientifical efforts in this field are directed just to the development of very fast, high energy resolution gamma-photon detectors [31][32][33]. The bulk density of soil and the partial density of water in soil are modeled, respectively, as varying along the LOS according to the laws…”

Section: Simulationsmentioning

confidence: 99%

On the Possibility of Determining the Distribution of a Substance Penetrating into a Dense Medium Using Gamma-Ray Detection and Ranging Approach

Gurdev

Dreischuh²,

Stoyanov³

et al. 2010

Acta Phys. Pol. A

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The possibility has been investigated of determining, using graydar (Gamma RAY Detection And Ranging) approach, the in-depth partial-density profile of some substance absorbed in a dense medium. Analytical algorithms have been derived for retrieving the in-depth profile of the partial density of the absorbed substance on the basis of the conjecturally known in-depth profile of the extinction of the absorbing medium and the experimentally determinable graydar profile. The retrieval error under the Poisson noise conditions has also been estimated analytically. The simulations performed of the Poisson-noise effect concern the case of soil moisture. The results obtained confirm the validity of the derived retrieval algorithms and error estimates and show that the soil moisture profile may be accurately determined to depths of 50 cm, depending on the dry-soil bulk density, the sensing photon flux, and the measurement time.

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Temperature dependence of the fast, near-band-edge scintillation from CuI, HgI2, PbI2, ZnO:Ga and CdS:In

Cited by 193 publications

References 17 publications

Current trends in scintillator detectors and materials

Current trends in scintillator detectors and materials

Luminescence of a ZnO:Ga crystal upon excitation in vacuum UV region

On the Possibility of Determining the Distribution of a Substance Penetrating into a Dense Medium Using Gamma-Ray Detection and Ranging Approach

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