Temperature Dependence of the Field-Effect Mobility of Sexithiophene. Determination of the
Density of Traps

Horowitz, Gilles; Hajlaoui, Riadh; Delannoy, P.

doi:10.1051/jp3:1995132

Cited by 208 publications

(161 citation statements)

References 37 publications

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“…Cho et al The simulation model is based on the multiple trapping and release theory, 13,14 which assumes band transport in the conduction band, with the additional existence of the mid-gap trapped states. Alternatively, we can regard E C as the mobility edge.…”

Section: -12mentioning

confidence: 99%

“…Intrinsic carrier transport, in particular, band transport, has been explored in organic single crystals, [9][10][11][12] and trap-limited charge transport has been examined in organic thin films, which have higher density of trap states due to the structural defect, grain boundaries, and chemical impurities. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27] The multiple trapping and release model for a Author to whom correspondence should be addressed. Electric mail: cho.j.ad@m.titech.ac.jp.…”

Section: Introductionmentioning

confidence: 99%

“…This model assumes that trapped levels exist below E C , so once charge is induced, it is trapped in the reservoir of traps Q T , from which a small part is thermally activated into the conduction band edge to become the free carrier Q F . charge transport has been proposed and widely accepted, 13,14 and there have been many attempts to determine the trap density of states (trap DOS). However, the trap DOS has been analyzed mainly for p-channel materials, [13][14][15][16][17][18][19][20] and comparatively limited works have been done for n-channel materials.…”

Section: Introductionmentioning

confidence: 99%

“…charge transport has been proposed and widely accepted, 13,14 and there have been many attempts to determine the trap density of states (trap DOS). However, the trap DOS has been analyzed mainly for p-channel materials, [13][14][15][16][17][18][19][20] and comparatively limited works have been done for n-channel materials. 15,[21][22][23] In particular, the trap DOS has not been systemically studied from the viewpoint of the basic transistor operation.…”

Section: Introductionmentioning

confidence: 99%

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Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

et al. 2013

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We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical VG above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

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Section: -12mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

et al. 2013

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“…The gate-dependent and thermal-activation-type mobility is often seen in the accumulation-mode FET of organics, cuprates and amorphous-Si 7,8,11 . This is considered to reflect the nature of localized levels in the energy gap originated from dangling bonds or grain boundaries.…”

Section: (B)mentioning

confidence: 99%

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

Ueno

Inoue

Akoh

et al. 2003

Applied Physics Letters

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A field-effect transistor that employs a perovskite-type SrTiO 3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al 2 O 3 films as a gate insulator on the SrTiO 3 substrate. The field-effect (FE) mobility is 0.1 cm 2 /Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2 K shows a thermal-activation-type behavior with an activation energy of 0.6 eV.

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Organic Field-Effect Transistors

Horowitz¹

1998

Adv. Mater.

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2,351

1,585

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Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and on±off current ratio. We compare the various compounds that have been used as the active component, and describe the most prominent fabrication techniques. Finally, we analyze the charge transport mechanisms in organic solids, and the resulting models of OFETs.

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Temperature Dependence of the Field-Effect Mobility of Sexithiophene. Determination of the Density of Traps

Cited by 208 publications

References 37 publications

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

Field-effect transistor on SrTiO3 with sputtered Al2O3 gate insulator

Organic Field-Effect Transistors

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