Temperature dependence of the fundamental band gap parameters in cadmium-rich ZnxCd1-xSe using photoluminescence spectroscopy

Gupta, L. R.; Rath, Saroj Kumar; Abbi, S. C.; Jain, F.

doi:10.1007/bf02706122

Cited by 18 publications

(18 citation statements)

References 18 publications

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“…As a matter of fact, one experimental data point shown by the symbol (×), found in literature, is in support of the linear variation. The latter experimental data is from PL measurements done by Gupta et al [36] on Cd 1−x Zn x Te alloys grown on GaAs (001) substrate using the metal-organic-chemical-vapor deposition (MOCVD) technique. Gupta et al studied the bandgap of these alloys with x = 0.025 and 0.045 as a function of temperature.…”

Section: Tablementioning

confidence: 99%

Absence of the bowing character in the common-anion II–VI ternary alloys

Tit¹,

Kim²,

Alawadhi³

2009

Journal of Alloys and Compounds

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Section: Tablementioning

confidence: 99%

Absence of the bowing character in the common-anion II–VI ternary alloys

Tit¹,

Kim²,

Alawadhi³

2009

Journal of Alloys and Compounds

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“…This way, as temperature increases, the energy bandgap of a semiconductor reduces and the generated photocurrent tends to slightly increase since lower energy photons are also absorbed. [40] The dependence of the bandgap energy with temperature (T) is given by the Varshni model: [19] …”

Section: Theorymentioning

confidence: 99%

“…A combination of a quadratic behavior, dominant in the low temperature range, with a linear behavior, dominant in the high temperature region, is expected. [19] A semiconductor operating at lower temperatures will have fewer available free electrons and holes for charge transport. At the same time, heating exponentially increases the intrinsic carrier population, nint, given by: [36] E n exp kT…”

Section: Theorymentioning

confidence: 99%

“…Two important works reporting the effect of temperature on photovoltaic parameters of solar cells were developed by Gupta et al [19] and Sarswat et al [20]. On Si-based solar cells, the temperature variations were intensively studied [21][22][23][24] and it was observed a decrease in the efficiency of the cell with temperature, mainly due to the decrease of the opencircuit voltage.…”

Section: Introductionmentioning

confidence: 99%

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Temperature effect on water splitting using a Si-doped hematite photoanode

Dias

Lopes

Andrade

et al. 2014

Journal of Power Sources

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The influence of temperature on the performance of a photoelectrochemical (PEC) cell prepared with Si-doped hematite photoanode was studied for water splitting. The cell performance was characterized by photocurrent-voltage (J-V) characteristic curves and electrochemical impedance spectroscopy at different cell operating temperatures, from 25 ºC to 65 ºC. A standard three-electrode configuration comprehending the photoelectrode of hematite, the counterelectrode of pure platinum wire (99.9 %) and the reference electrode of Ag/AgCl/Sat.KCl was used. The identification of possible degradation pathways was addressed. It was observed that the generated photocurrent-density 2 increased with temperature. However, the photoelectrode became unstable above 50 ºC. The experiments performed concerning the study of the temperature effect and the aging showed that the optimal operation temperature of the PEC cell is ca. 45 ºC; this temperature ensures simultaneously the highest photocurrent-density and stability. This study is important for understanding the behavior of hematite photoelectrodes operating under real outdoor conditions.

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“…The PL data shown correspond to: (a) PL1: on CdSeTe alloys from reference [8]; (b) PL2: on ZnSeTe alloys from reference [4]; (c) PL3: on CdZnTe alloys from reference [9]; and (d) PL4: on CdZnSe alloys from reference [10]. The curves correspond to our TB-results fitting using either a linear function for the common-anion or a quadratic function for the common-cation ternary alloys, respectively.…”

Section: Modelling Of Photoluminescence Datamentioning

confidence: 99%

Existence or absence of bandgap bowing in II-VI ternary alloys: Comparison between common-anion and common-cation cases

Tit¹,

Kim²,

Reshak³

et al. 2010

J. Phys.: Conf. Ser.

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Existence or absence of bandgap bowing in II-VI ternary alloys: Comparison between commonanion and common-cation cases Abstract. The common-anion and common-cation II-VI ternary alloys of the family Cd(Zn)Se(Te) are theoretically investigated based on two different methods. Within the virtual-crystal approximation (VCA), both the sp 3 s*-tight-binding method, with the inclusion of spin-orbit coupling, and the first-principle full-potential linear augmented plane waves (FP-LAPW) technique are employed to determine the alloy constituents' charge states (ionicities) and degree of bond polarity. The results show that: (i) in the common-cation ternary alloys (i.e., CdSe x Te 1-x and ZnSe x Te 1-x ), the anions alter a strong competition in trapping more charge. Such a competition builds up a compromised effect yielding the bowing behaviour. Whereas, (ii) in the common-anion ternary alloys (i.e., Cd y Zn 1-y Te and Cd y Zn 1-y Se), the absence of such competition would cause the complete absence of bandgap bowing behaviour. The variation of the bandgap is found to be rather close to linear. The obtained good agreement between our theoretical results and the recently available photoluminescence data does further corroborate our claims.

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Temperature dependence of the fundamental band gap parameters in cadmium-rich ZnxCd1-xSe using photoluminescence spectroscopy

Cited by 18 publications

References 18 publications

Absence of the bowing character in the common-anion II–VI ternary alloys

Absence of the bowing character in the common-anion II–VI ternary alloys

Temperature effect on water splitting using a Si-doped hematite photoanode

Existence or absence of bandgap bowing in II-VI ternary alloys: Comparison between common-anion and common-cation cases

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