Temperature Dependence of the Fundamental Optical Absorption Edge in Stannic Oxide

Nagasawa, Michitaro; Shionoya, Shigeo

doi:10.1143/jpsj.30.1118

Cited by 36 publications

(35 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Our calculated band structure does not exhibit the conjectured lowerlying VBs approximately 0.2 or 0.4 eV below the VBM. 23,24 Although we observe that the next-lowest VB level is a doubly degenerate state with the Γ − 5 irreducible representation, which is consistent with the same set of experiments, 23,24 it occurs only at 0.71 eV below the VBM and thus cannot account for their observations.…”

Section: B Irreducible Representations and Allowed Transitionssupporting

confidence: 84%

“…The earliest self-consistent calculations for SnO 2 , employing the augmented-plane-wave 11 and linearized muffin-tin orbital 9 methods, along with more recent ones in the augmented-spherical-wave 12 method, predicted an indirect gap with the VBM at the R point instead of Γ. Tightbinding calculations by Robertson 8 seemed more consistent with the experimental interpretations of a direct gap and highestlying VB symmetry assignments, by showing a VB of the suggested symmetry Γ − 5 approximately 0.2 eV below the VBM. 15,[22][23][24] However, the next lower VB in Robertson's calculations was at −0.8 eV, which cannot explain the experimentally observed absorption onsets and interpretations. As expected, calculations within the local-density or generalized gradient approximation (LDA, GGA, respectively) lead to a very strong underestimation of the fundamental band gap.…”

Section: Introductionmentioning

confidence: 78%

“…13,14,21 Accordingly, the respective onsets in single-photon optical absorption experiments are weak. [21][22][23][24][25] Despite the relatively small absorption coefficients, these experiments have revealed the polarization dependence of the onsets. While the transitions are dipole-forbidden in single-photon absorption, they are allowed in two-photon absorption, and the measured value of 3.6 eV 10,26 is now widely accepted as the band gap of SnO 2 .…”

Section: Introductionmentioning

confidence: 97%

“…Nagasawa and Shionoya reported an allowed transition value of 3.75 eV for light polarized perpendicular to the tetragonal c axis (E ⊥ c), which they associated with a VB of symmetry Γ − 5 lying 0.15 to 0.20 eV below the VBM. 15 For light polarized parallel to c (E c), the absorption spectra exhibit a diffuse edge approximately 0.4 eV above the fundamental edge, [22][23][24] lacking the fine excitonic structure of the absorption spectra for perpendicular light polarization. 10,13,14,24 This feature was assigned to a hypothetical valence band with Γ − 2 symmetry 23,24 lying 0.4 eV eV below the Γ + 3 VBM, consistent with their interpretation of direct, symmetry-allowed transitions in the same study.…”

Section: Introductionmentioning

confidence: 99%

“…[22][23][24] Up until now no theoretical band structure is capable of explaining all experimental facts for SnO 2 . The earliest self-consistent calculations for SnO 2 , employing the augmented-plane-wave 11 and linearized muffin-tin orbital 9 methods, along with more recent ones in the augmented-spherical-wave 12 method, predicted an indirect gap with the VBM at the R point instead of Γ. Tightbinding calculations by Robertson 8 seemed more consistent with the experimental interpretations of a direct gap and highestlying VB symmetry assignments, by showing a VB of the suggested symmetry Γ − 5 approximately 0.2 eV below the VBM.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

et al. 2011

View full text Add to dashboard Cite

The structural, electronic, and optical properties of the semiconducting oxide SnO 2 are investigated using first-principles calculations. We employ the G 0 W 0 formalism based on hybrid-functional calculations to compute the quasiparticle band structure and density of states for which we find good agreement with results from photoemission and two-photon absorption experiments. We also address open questions regarding the band ordering and band symmetries. In a second step we use our electronic structure as a starting point to calculate optical spectra by solving the Bethe-Salpeter equation including the electron-hole interaction. The dielectric tensor is predicted for a wide range of photon energies. Our results resolve the long-standing discrepancy between theory and experiment on the highly anisotropic onsets of absorption. The anisotropy can be explained in terms of dipole-allowed direct transitions in the vicinity of the valence-band maximum without having to invoke lower lying valence bands.

show abstract

Section: B Irreducible Representations and Allowed Transitionssupporting

confidence: 84%

Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

et al. 2011

View full text Add to dashboard Cite

show abstract

Chemically Modified Oxide Electrodes

Ganzorig

Fujihira

2007

Encyclopedia of Electrochemistry

View full text Add to dashboard Cite

The sections in this article are Introduction Electrode Preparation General: Transparent Conducting Oxide Films Cleaning of Substrate Surfaces Cleaning with Solvents Cleaning by Heating and Irradiation Cleaning by Stripping Lacquer Coatings Cleaning in an Electrical Discharge Cleaning Cycles Cleaning of Organic Glass Chemical Methods of Film Deposition Spraying Pyrolysis Chemical Vapor Deposition Sol‐gel Process Physical Methods of Film Deposition Evaporation Sputtering Reactive Ion Plating Pulsed Laser Deposition Other Techniques The Properties of Transparent Conducting Oxide Electrode Surfaces Electrode Modification General SnO 2 ITO ZnO TiO 2 and ZrO 2 Polypyridyl Ru Complexes and Organic Dyes as Sensitizers Short‐chain Alkanoic and Benzoic Acids Long‐chain Organic Acids Other Oxides Organosilanization General Wide Bandgap Transparent Conducting Oxide Electrodes SnO 2 TiO 2 and ZrO 2 ZnO ITO Large Bandgap Oxide Electrodes Potential Applications Tuning the Work Function of Electrodes Correlation of Device Performance with Changes in the Work Function Other Possible Applications SnO 2 ITO ZnO TiO 2 Other Oxides Summary Acknowledgement

show abstract

Growth, characterization, and properties of bulk SnO₂ single crystals

Galazka

Uecker

Klimm

et al. 2013

Physica Status Solidi (a)

View full text Add to dashboard Cite

SnO2 is a semiconductor with a wide optical bandgap (3.5 eV), which makes it an attractive transparent semiconducting oxide (TSO) for electronic and opto‐electronic applications. At elevated temperatures it is, however, much more unstable than other TSOs (such as ZnO, Ga2O3, or In2O3). This leads to a rapid decomposition even under very high oxygen pressures. Our experiments showed that stoichiometric SnO2 does not melt up to 2100 °C, in contradiction to earlier published data. Bulk SnO2 single crystals, that could provide substrates for epitaxial growth, have not been reported so far. Hereby we report on truly bulk SnO2 single crystals of 1 inch diameter grown by physical vapor transport (PVT). The most volatile species during SnO2 decomposition is, in addition to oxygen, SnO, which is stable in the gas phase at high temperature and reacts again with oxygen at lower temperatures to form SnO2. We identified a relatively narrow temperature window, temperature gradients and a ratio of SnO/O2 for providing the best conditions for SnO2 single crystal growth. X‐ray powder diffraction (XRD) proved the single SnO2 phase. Moreover, by selecting a suitable SnO/O2 ratio it was possible to obtain either n‐type conductivity with electron concentrations up to 2 × 1018 cm−3 and electron mobilities up to 200 cm2 V−1 s−1, or insulating behavior. The crystals exhibited an optical absorption edge located at 330–355 nm, depending on the crystal orientation, and a good transparency over visible and near infrared (NIR) spectra.

show abstract

Temperature Dependence of the Fundamental Optical Absorption Edge in Stannic Oxide

Cited by 36 publications

References 15 publications

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Chemically Modified Oxide Electrodes

Growth, characterization, and properties of bulk SnO₂ single crystals

Contact Info

Product

Resources

About

Temperature Dependence of the Fundamental Optical Absorption Edge in Stannic Oxide

Cited by 36 publications

References 15 publications

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

Chemically Modified Oxide Electrodes

Growth, characterization, and properties of bulk SnO2 single crystals

Contact Info

Product

Resources

About

Growth, characterization, and properties of bulk SnO₂ single crystals