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Charlton, Timothy; Lederman, David

doi:10.1103/physrevb.63.094404

Cited by 9 publications

(8 citation statements)

References 24 publications

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“…7,8 In recent studies, the coexistence of GMR and AMR has been reported in multilayers and multilayered nanowires. 6,[9][10][11] Dips in the MR data, similar to that shown in Fig. 2͑c͒, have also been seen.…”

supporting

confidence: 75%

“…6,11 Charlton et al, 11 assuming independent contributions from AMR and GMR, determined that the dips originated from the AMR scattering and obtained excellent agreement between simulations and experiment. In our studies, in contrast to the work of Charlton et al, 11 a temperature dependence in the positions of the minima is found. The high aspect ratio of the individual wires yields a shape anisotropy that gives a preference for equilibrium magnetization along the wire axis.…”

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confidence: 92%

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Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates

Bal

Ursache

Tuominen

et al. 2002

Applied Physics Letters

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Articles you may be interested inTemplated germanium nanowire synthesis using oriented mesoporous organosilicate thin films Conventional lithographic exposure is used to selectively degrade regions of a self-assembled diblock copolymer film to obtain a honeycomblike nanoporous array template with arbitrary lateral design. Combined with other lithographic process steps, this enables the fabrication of arrays of nanostructures interfaced to electrical probes for device applications. To demonstrate, a unique magnetotransport device is fabricated, consisting of an array of electrodeposited Co nanowires standing atop a thin gold film patterned into a four-probe resistor configuration. Magnetoresistance measurements, performed at various temperatures and magnetic field orientations, reveal the coexistence of anisotropic magnetoresistance and giant magnetoresistance.

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supporting

confidence: 75%

mentioning

confidence: 92%

Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates

Bal

Ursache

Tuominen

et al. 2002

Applied Physics Letters

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“…[6][7][8][9] In these samples the magnetic easy axis of the Co layers was in the plane of the layer, and the growth direction was along the (101 0) direction. In zero external field, it was found from magnetotransport and magnetoresisitance measurements that adjacent Co layers are AF ordered when the Re layer thickness is less than 1.0 nm, and magnetically decoupled when the Re layer thickness was greater than or equal to 1.5 nm.…”

Section: First Principles Calculations Of Magnetoresistance As a Funcmentioning

confidence: 99%

First principles calculations of magnetoresistance as a function of external field in layered Co–Re hexagonal-close-packed superlattices

Stern

MacLaren

Charlton

et al. 2004

Journal of Applied Physics

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The magnetoresistance was calculated for a layered Co/Re hcp(101̄0) superlattice as a function of external magnetic field. Similar to recent experiments which showed a maximum magnetoresistance of 4.5%, the system modeled here had its growth axis along the (101̄0) axis and the magnetic easy axis in the plane of the film. Orientations of the magnetic moments in each Co layer as a function of external field were calculated using a self-consistent mean-field method, and were used as input parameters in the calculation of the conductivity tensor. The conductivity tensor was calculated via the Kubo–Greenwood linear response formalism within the layered-Korringa–Kohn–Rostoker approach to density functional theory. The total magnetoresistance is explained as a sum of anisotropic magnetoresistance and giant magnetoresistance. A calculated spin–flop transition at low fields has obvious consequences on the calculated magnetoresistance.

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“…Only one physical constraint was placed on the adjustable parameters in the simulation: that p, /pll must be the same for the current flowing along a given crystallographic direction because this ratio is proportional to the ratio of the spin up and spin down resistivities, which only depends on the crystallographic direction in which the current is flowing [16,17]. Our analysis shows that the interesting dips in the MR are only due to AMR [15]. The magnetoresistance of hcp (0001) oriented Co/Re multilayers has been found by other authors to be less than 2 % at 18 K [18], while our superlattices have a MR larger than 3.5 % at 5 K in certain geometries.…”

Section: Pgxir (H)-p~ai -mentioning

confidence: 99%

“…Magnetoresistance measurements were made using a cryostat with a 5.5 T superconducting magnet. The sample was patterned into an "L" shape using standard photolithography techniques [15]. One of the arms of the pattern was oriented parallel to the c-axis, while the other was perpendicular to it.…”

Section: Methodsmentioning

confidence: 99%

Temperature Dependence of the Magnetoresistance of Co/Re Superlattices

2001

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Hcp (10.0) Co/Re superlattices were grown by dc magnetron sputtering on sapphire (11.0) substrates with the [00.1] direction of the superlattice in the film plane. The temperature-dependent magnetoresistance (MR) was measured on samples patterned by photolithography from 10 K to 300 K in a 5.5 T superconducting magnet. The pattern allows the measurement of the MR with the current (/) and the magnetic field (H) parallel or perpendicular to the magnetic easy axis (c, the [00.1] direction). Measurements at 5 K on an antiferromagnetically-coupled sample shows dips in the MR near H = 0 when H ]F c and H lI, dips below the saturation value at H -2.5 kOe for H II c and H I I configuration due to the competition between the anisotropic magnetoresistance (AMR) and the giant magnetoresistance (GMR). Since the AMR is dependent on the transport within the ferromagnetic layers, the temperature dependence yields information about the relative magnitudes of interface vs. bulk spin-dependent scattering. Our analysis shows that the GMR is anisotropic and that the spin-dependent scattering occurs predominantly at the interfaces only for certain configurations. INTRODUCTIONGiant magnetoresistance (GMR), discovered in the late 1980's [1], which occurs in magnetic multilayers and nanoparticles, and the anisotropic magnetoresistance (AMR), extensively studied since the 1930's in bulk ferromagnetic materials [2], are effects that have been recently under intense scrutiny due to their technological applications. Only relatively recently, however, have these two effects been studied in the same system. Some previously studied systems with both AMR and GMR include Co/Cr [3], Fe/Cr [4,5], Co/Ru [6], Co/Cu [7,8] and Permalloy/Cu [9] multilayers. These include experiments which separate the AMR and GMR in the same system [7] and experiments which focus on the enhancement of the GMR by AMR in systems with magnetocrystalline anisotropy, like Co/Cr multilayers [3].A topic of great current interest is determining the nature of the spin-dependent scattering responsible for GMR. Experiments where a monolayer or two of a magnetic material were added to the interface of a spin-valve [ 10] and the dependence of the GMR on interface roughness on Fe/Cr [4] show that in those systems the GMR depends strongly on scattering at the interfaces. But other studies show that the GMR depends on the film layer thickness [11], and that the GMR is dominated by bulk spin-dependent scattering [12].Here we summarize the results of a recent, comprehensive study of the temperature-

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Temperature dependence of the magnetoresistance in Co/Re superlattices onAl2O3
Timothy Charlton
¹
,
David Lederman
²

Cited by 9 publications

References 24 publications

Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates

Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates

First principles calculations of magnetoresistance as a function of external field in layered Co–Re hexagonal-close-packed superlattices

Temperature Dependence of the Magnetoresistance of Co/Re Superlattices

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Temperature dependence of the magnetoresistance in Co/Re superlattices onAl2O3Timothy Charlton1, David Lederman2

Cited by 9 publications

References 24 publications

Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates

Nanofabrication of integrated magnetoelectronic devices using patterned self-assembled copolymer templates

First principles calculations of magnetoresistance as a function of external field in layered Co–Re hexagonal-close-packed superlattices

Temperature Dependence of the Magnetoresistance of Co/Re Superlattices

Contact Info

Product

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About

Temperature dependence of the magnetoresistance in Co/Re superlattices onAl2O3
Timothy Charlton
¹
,
David Lederman
²