2009
DOI: 10.1063/1.3187789
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Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance

Abstract: The temperature dependencies of optical transitions in as-grown Ga 0.64 In 0.36 N 0.046 As 0.954 multiple quantum wells ͑QWs͒ of various widths ͑ranging from 3.9 to 8.1 nm͒ grown at the low temperature of 375°C were studied by photoreflectance ͑PR͒. In addition to the 11H transition, which is the fundamental transition for this QW, the optical transitions between excited states ͑22H and 33H transitions, where the notation klH denotes the transition between the kth heavy-hole valence subband and the lth conduct… Show more

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Cited by 3 publications
(2 citation statements)
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“…This technique due to its absorption-like character is an excellent tool to investigate the direct optical transitions between both ground and excited states282930. The differential-like character of PR spectroscopy allows to eliminate the background signal and detect even very weak optical transitions.…”
mentioning
confidence: 99%
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“…This technique due to its absorption-like character is an excellent tool to investigate the direct optical transitions between both ground and excited states282930. The differential-like character of PR spectroscopy allows to eliminate the background signal and detect even very weak optical transitions.…”
mentioning
confidence: 99%
“…In this paper to investigate the electric band structure of MoS 2 , MoSe 2 , WS 2 , and WSe 2 under hydrostatic pressure we applied photoreflectance (PR) spectroscopy. This technique due to its absorption-like character is an excellent tool to investigate the direct optical transitions between both ground and excited states 28 29 30 . The differential-like character of PR spectroscopy allows to eliminate the background signal and detect even very weak optical transitions.…”
mentioning
confidence: 99%