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Radoff, P. L.; Bishop, S. G.

doi:10.1103/physrevb.5.442

Cited by 38 publications

(13 citation statements)

References 22 publications

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“…The smallest direct energy gap has also been fo und to increase steadily with alloying, resulting in a more parabolic conduction band (108). This model is different from the band structure of Cd3-xZnxAsz alloys (and Cd3Asz) proposed in (110,111), where the authors, on the basis of interband magnetoabsorption data, make an analogy with the Cd1_yHgyTe system and suggest that the direct bandgap of �tl3 -xZnxAsz is zero at x = 0.4. The observed optical absorption was explained by direct allowed and unallowed transitions.…”

Section: Cd3as2-zn3as2 Solid Solutionsmentioning

confidence: 85%

“…This model requires the interband magneto-optical transition to be indirect between a valence band energetically over lapping a non parabolic conduction band (110). The authors (110) suggest also that interband magnetoabsorption data (109)(110)(111) might be analyzed much like the ()(-Sn structure. At the moment it is very difficult to decide which type of band model is most reasonable for Cd3As2; additional experimental and theoretical studies are needed.…”

Section: Cd3as2mentioning

confidence: 96%

“…This model is slightly different fr om that proposed in (78), where the presence of a second heavy-mass conduction band is a ssumed. From optical transmission and interband low temperature magnetoabsorption measurements (109)(110)(111), it was concluded that Cd3Asz represents a negative Kane type gap semi conductor with E g � -0.22 eV ( Figure Sc). This model requires the interband magneto-optical transition to be indirect between a valence band energetically over lapping a non parabolic conduction band (110).…”

Section: Cd3as2mentioning

confidence: 98%

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Semiconducting Compounds of the AII BV Group

Żdanowicz¹,

Żdanowicz²

1975

Annu. Rev. Mater. Sci.

127

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Section: Cd3as2-zn3as2 Solid Solutionsmentioning

confidence: 85%

Section: Cd3as2mentioning

confidence: 96%

Section: Cd3as2mentioning

confidence: 98%

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Semiconducting Compounds of the AII BV Group

Żdanowicz¹,

Żdanowicz²

1975

Annu. Rev. Mater. Sci.

127

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“…This nonlinear feature was also observed in another II−V semiconductor alloy films, namely, those of Cd 3 (As 1−x P x ) 2 and (Zn x Cd 1−x ) 3 P 2 (b = −0.497 eV). 26,28 We conclude that the composition of the Zn 3 P 2 −Zn 3 As 2 solid solution can be continuously tuned to obtain the desired E g value (1.0−1.5 eV). The UV−visible spectra of the T-Zn 3 (P 1−x As x ) 2 NWs are shown in the Supporting Information, Figure S7.…”

mentioning

confidence: 95%

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Park

Jang

et al. 2015

Nano Lett.

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Semiconductor alloy nanowires (NWs) have recently attracted considerable attention for applications in optoelectronic nanodevices because of many notable properties, including band gap tunability. Zinc phosphide (Zn3P2) and zinc arsenide (Zn3As2) belong to a unique pseudocubic tetragonal system, but their solid solution has rarely been studied. Here In this study, we synthesized composition-tuned Zn3(P1-xAsx)2 NWs with different crystal structures by controlling the growth conditions during chemical vapor deposition. A first type of synthesized NWs were single-crystalline and grew uniformly along the [110] direction (in a cubic unit cell) over the entire compositional range (0 ≤ x ≤ 1) explored. The use of an indium source enabled the growth of a second type of NWs, with remarkable cubic-hexagonal polytypic twinned superlattice and bicrystalline structures. The growth direction of the Zn3P2 and Zn3As2 NWs was also switched to [111] and [112], respectively. These structural changes are attributable to the Zn-depleted indium catalytic nanoparticles which favor the growth of hexagonal phases. The formation of a solid solution at all compositions allowed the continuous tuning of the band gap (1.0-1.5 eV). Photocurrent measurements were performed on individual NWs by fabricating photodetector devices; the single-crystalline NWs with [110] growth direction exhibit a higher photoconversion efficiency compared to the twinned crystalline NWs with [111] or [112] growth direction.

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“…The energy gap E, has been determined t o be 1. 15 to 1.20 eV a t 300 O K for Zn3P, according t o the temperature dependence of the electroconductivity [l, 21 and 0.58 eV a t 77 O K for Cd,P2, according t o the measurements of photo-and stimulated edge emission spectra [3, 41 and also edge transmission spectra [5]. The peculiarities of stimulated emission state that E , in Cd,P, is due t o direct transitions.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties and Energy Band Structure of Zn₃P₂and Cd₃P₂ Crystals

Соболев¹,

Syrbu²

1974

Physica Status Solidi (b)

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Edge absorption, photoconductivity, and reflectivity spectra are investigated of Zn,P, crystals in the range from 1 to 12.5 eV and reflectivity spectra of Cd,P, crystals in the range from 1 to 12.5 eV. The Eg value of Zn,P, has been experimentally determined a t 293 and 77 OK. I t s nature has been found to be due to direct transitions. Three peaks of exciton and interband character have been observed in the photoconductivity spectrum of Zn,P, single crystals. Complex structures (about 12 peaks) have been observed in the reflectivity spectra of both compounds. Most of these structures may be accounted for in terms of the well-known theoretical calculations of their bands. Several peaks have been observed in the most thoroughly studied spectrum of Zn,P,. These peaks cannot be explained by the theoretical band scheme and are probably caused by the peculiarities of the bands of real crystals of the Zn,P, type, which have been lost in the well-known theoretical model because of the accepted simplifications of the crystal lattice.

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Temperature Dependence of the Optical Transmission Edge inCd3(Asx

Cited by 38 publications

References 22 publications

Semiconducting Compounds of the AII BV Group

Semiconducting Compounds of the AII BV Group

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Optical Properties and Energy Band Structure of Zn₃P₂and Cd₃P₂ Crystals

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Temperature Dependence of the Optical Transmission Edge inCd3(Asx

Cited by 38 publications

References 22 publications

Semiconducting Compounds of the AII BV Group

Semiconducting Compounds of the AII BV Group

Zn3P2–Zn3As2 Solid Solution Nanowires

Optical Properties and Energy Band Structure of Zn3P2and Cd3P2 Crystals

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Product

Resources

About

Zn₃P₂–Zn₃As₂ Solid Solution Nanowires

Optical Properties and Energy Band Structure of Zn₃P₂and Cd₃P₂ Crystals