Temperature dependence of the optical properties of silicon

Weakliem, H. A.; Redfield, David

doi:10.1063/1.326135

Cited by 257 publications

(87 citation statements)

References 9 publications

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“…The relative rate of 55 Fe clusters also agrees with this scaling. Instead, for the 980 nm laser data we observe a saturation starting at V d ≃60 V. Using the absorption coefficient a in Si from [21], we compute the Si thickness in which 85 % of the charge carriers are generated to be (130±25) µm, where the quoted uncertainty represents the effect of a 15 % change in the value of the Si absorption constant, consistent with observations in [21]. We estimate the effective depleted thickness as a function of the depletion voltage, assuming that the measured signal scales as:…”

Section: Depletion Depth Charge Carrier Signal and Collection Timementioning

confidence: 99%

Characterisation of a pixel sensor in SOI technology for charged particle tracking

Battaglia¹,

Bisello²,

Contarato³

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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This paper presents the results of the characterisation of a pixel sensor manufactured OKI 0.2 µm SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.

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Section: Depletion Depth Charge Carrier Signal and Collection Timementioning

confidence: 99%

Characterisation of a pixel sensor in SOI technology for charged particle tracking

Battaglia¹,

Bisello²,

Contarato³

et al. 2011

Nuclear Instruments and Methods in Physics Research Section A:

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“…Measuring the power-voltage characteristics of PV at different temperatures enables a temperature-dependent power loss coefficient to be determined (Raziemska, 2003). Crystalline silicon PV operating above 25°C typically, shows a temperature-dependent power decrease with a coefficient of between 0.4%/K (Weakliem and Redfield, 1979;Krauter, 1994) and 0.65%/K (Raziemska, 2003). Overall integration of PV into buildings has been shown to further rise PV operating temperature to such an extent that there has been reported a 9.3% further decreased power output compared to nonintegrated PV (Krauter et al, 1999).…”

Section: Thermal Management Of Photovoltaicsmentioning

confidence: 99%

Evaluation of phase change materials for thermal regulation enhancement of building integrated photovoltaics

Hasan¹,

et al. 2010

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“…The simulated material is silicon, with variable optical properties as shown in Table 4, from [10], and constant properties as shown in Table 5. For this simulation a collimated circular-profile laser with 0.5 cm diameter and power of 70 W will be directed toward the z = 0 surface of the cube.…”

Section: Photon Deposition With Variable Optical Propertiesmentioning

confidence: 99%

Monte Carlo method for photon heating using temperature-dependent optical properties

Slade

Aguilar

2015

Computer Methods and Programs in Biomedicine

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Peer reviewed eScholarship.orgPowered by the California Digital Library University of California The Monte Carlo method for photon transport is often used to predict the volumetric heating that an optical source will induce inside a tissue or material. This method relies on constant (with respect to temperature) optical properties, specifically the coefficients of scattering and absorption. In reality, optical coefficients are typically temperature-dependent, leading to error in simulation results. The purpose of this study is to develop a method that can incorporate variable properties and accurately simulate systems where the temperature will greatly vary, such as in the case of laser-thawing of frozen tissues.A numerical simulation was developed that utilizes the Monte Carlo method for photon transport to simulate the thermal response of a system that allows temperature-dependent optical and thermal properties. This was done by combining traditional Monte Carlo photon transport with a heat transfer simulation to provide a feedback loop that selects local properties based on current temperatures, for each moment in time. Additionally, photon steps are segmented to accurately obtain path lengths within a homogenous (but not isothermal) material. Validation of the simulation was done using comparisons to established Monte Carlo simulations using constant properties, and a comparison to the Beer-Lambert law for temperature-variable properties.The simulation is able to accurately predict the thermal response of a system whose properties can vary with temperature. The difference in results between variable-property and constant property methods for the representative system of laser-heated silicon can become larger than 100 K. This simulation will return more accurate results of optical irradiation absorption in a material which undergoes a large change in temperature. This increased accuracy in simulated results leads to better thermal predictions in living tissues and can provide enhanced planning and improved experimental and procedural outcomes.

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Temperature dependence of the optical properties of silicon

Cited by 257 publications

References 9 publications

Characterisation of a pixel sensor in SOI technology for charged particle tracking

Characterisation of a pixel sensor in SOI technology for charged particle tracking

Evaluation of phase change materials for thermal regulation enhancement of building integrated photovoltaics

Monte Carlo method for photon heating using temperature-dependent optical properties

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