Temperature dependence of the photoinduced fatigue-recovery phenomena of photoluminescence under prolonged irradiation in GeS2 chalcogenide glass

Nakanishi, Takayuki; Tomii, Yoichi; Hachiya, Kan

doi:10.1016/j.jnoncrysol.2007.10.015

Cited by 5 publications

(9 citation statements)

References 12 publications

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“…13 (at 10 K) and 14 (at 90 K) for Ge 10 S 90 . The side-band at 2.28 eV for Ge 33.3 S 66.7 by Ar + -ion laser excitation forms a high-energy tail of the main peak at 2.20 eV, as demonstrated in the previous study [33].…”

Section: Composition Dependence Of the Photo-induced Phenomena And Sisupporting

confidence: 79%

“…The fitting functions were given and explained in Ref. 33. The time-dependent peak intensity of PL for GeS 2 was also presented.…”

Section: Resultsmentioning

confidence: 99%

“…The sample preparation process has already been described in a previous report [33]. Bulk Ge 20 S 80 and Ge 10 S 90 samples, other than Ge 33.3 S 66.7 of Ge-S glasses were prepared 4 by the melt-quenching technique.…”

Section: Preparation Of Samplesmentioning

confidence: 99%

“…(4) in Ref. 33, which explicitly took the side-band effect below 10 K into consideration for 8 Ge 33.3 S 66.7 , and below 30 K for Ge 20 S 80 . As discussed above, Eqs.…”

Section: Composition Dependence Of the Fatigue-recovery Of Photoluminmentioning

confidence: 99%

“…In our previous study [33], temperature dependence of the photo-induced PL fatigue-recovery phenomena in GeS 2 glass was investigated. The mechanism of PL fatigue can be explained by photo-induced creation of meta-stable neutral defects D 0 , which are non-radiative recombination centers.…”

Section: Introductionmentioning

confidence: 99%

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Time-dependent photoluminescence fatigue-recovery phenomena in germanium sulfide glasses

Nakanishi

Tomii

Hachiya

2013

Electrochimica Acta

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Photoluminescence (PL) fatigue-recovery phenomena in germanium sulfide were investigated, and the temperature dependence of the time-dependent PL intensity for several compositions (Ge 33.3 S 66.7 , Ge 20 S 80 and Ge 10 S 90 ) was analyzed. Side-bands were observed and two bands out of them for argon-ion laser excitation, one at 2.25 eV for all compositions and the other extended from 2.15 to 2.45 for Ge 10 S 90 especially at the lower temperatures, were used to fully describe the time-dependence.The functional form which is similar to those in the previous report [T. Nakanishi et al., J. Non-Cryst. Solids 354 (2008) 1627] was used and it is extended to account for the effect of side-band at below 30 K for Ge 20 S 80 and monotonous decrease of background for Ge 10 S 90 .

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Section: Composition Dependence Of the Photo-induced Phenomena And Sisupporting

confidence: 79%

“…The fitting functions were given and explained in Ref. 33. The time-dependent peak intensity of PL for GeS 2 was also presented.…”

Section: Resultsmentioning

confidence: 99%

Section: Preparation Of Samplesmentioning

confidence: 99%

“…(4) in Ref. 33, which explicitly took the side-band effect below 10 K into consideration for 8 Ge 33.3 S 66.7 , and below 30 K for Ge 20 S 80 . As discussed above, Eqs.…”

Section: Composition Dependence Of the Fatigue-recovery Of Photoluminmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations