Temperature dependence of the radiative recombination coefficient in silicon

Schlangenotto, Heinrich; Maeder, H.; Gerlach, W.

doi:10.1002/pssa.2210210140

Cited by 140 publications

(89 citation statements)

References 24 publications

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“…More experimental and theoretical work is required to investigate the combined influence of coulomb scattering (Matrix transport) and excitons. Figure 4: Relative Exciton concentration vs. total carrier concentration in the electronhole plasma according to [2] …”

Section: Resultsmentioning

confidence: 99%

“…Concentrations of excitons in the electron-hole-plasma of bipolar power devices had been determined experimentally more than 30 years ago [2]. Their contributions in carrier transport have been discussed [3,4], but experiments on minority carrier diffusion including exciton contributions, especially at low temperatures (¡ 100K) had not been performed until now.…”

Section: Introductionmentioning

confidence: 99%

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Experiments on Minority Carrier Diffusion in Silicon: Contributions of Excitons

Mohrhof

Silber

2004

Simulation of Semiconductor Processes and Devices 2004

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Experiments on minority carrier diffusion using an a.c. photocurrent method exhibit very good agreement with Klaassens's model [1] at temperatures 250K -500K, but very large deviations at 100K and intermediate doping levels. They can be perfectly explained using published results on exciton diffusion constants and on concentrations of excitons in electron-hole-plasma. Our results confirm strongly that simulation of bipolar devices at low temperatures requires consideration of exciton formation.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experiments on Minority Carrier Diffusion in Silicon: Contributions of Excitons

Mohrhof

Silber

2004

Simulation of Semiconductor Processes and Devices 2004

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“…26 We use QSSPC to estimate the bulk lifetime in the spalled layer at room temperature and obtain a value of 380 ls, which is 2.5 times lower than the theoretically estimated value of 967 ls. 29,30 Thus, we see some significant degradation of the material in the thin wafer, despite the still excellent effective lifetimes that facilitate the use of the wafer for high-efficiency solar cells. The measurements on the substrate after the lift-off [ Fig.…”

Section: Sample Preparation Exfoliation and Electronic Propertimentioning

confidence: 99%

Kerfless exfoliated thin crystalline Si wafers with Al metallization layers for solar cells

et al. 2015

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We report on a kerfless exfoliation approach to further reduce the costs of crystalline silicon photovoltaics making use of evaporated Al as a double functional layer. The Al serves as the stress inducing element to drive the exfoliation process and can be maintained as a rear contacting layer in the solar cell after exfoliation. The 50-70 lm thick exfoliated Si layers show effective minority carrier lifetimes around 180 ls with diffusion lengths of 10 times the layer thickness. We analyze the thermo-mechanical properties of the Al layer by x-ray diffraction analysis and investigate its influence on the exfoliation process. We evaluate the approach for the implementation into solar cell production by determining processing limits and estimating cost advantages of a possible solar cell design route. The Al-Si bilayers are mechanically stable under processing conditions and exhibit a moderate cost savings potential of 3-36% compared to other c-Si cell concepts.

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“…, the likelihood of these photons leaving the calorimeter chip is reasonably high 6 . At dose rates of 10 9 rads(Si)/s, Auger recombination is by far the dominant process for electron-hole pairs created by electron energy deposition in silicon.…”

Section: Appendixmentioning

confidence: 99%