The temperature dependence of the intrinsic radiative recombination coefficient B in silicon was measured from 100 to 400 OK. I n contrast to previous calculations, B decreases with temperature. For interpretation of the measurements, a unique theory of the indirect radiative band-to-band and free exciton recombination is given. The decrease of B with increasing T is due to the decrease of the exciton concentration and of the Coulomb-enhancement of the band-to-band recombination rate. The latter however is smaller than the exciton recombination part even a t room temperature. The constants of the exciton and band-to-band recombination are determined. Es wurde die Temperaturabhangigkeit des Koeffizienten B der intrinsischen strahlendenRekombination in Silizium von 100 bis 400 OK gemessen. I m Gegensatz zu friiheren Rechnungen nimmt B mit der Temperatur ab. Zur Interpretation der Messungen wird eine einheitliche Theorie der indirekten strahlenden Band-Band-und Freien-Exzitonen-Rekombination aufgestellt. Die Abnahme von B mit steigendeni T geht auf die Abnahnie der Exzitonenkonzentration und der Coulomb-VergroBerung der Band-Band-Rekombinationsrate zuriick. Letztere ist jedoch noch bei Zimmertemperatur kleiner als der Exzitonenrekombinationsanteil. Die Konstanten der Exzitonen-und Band-Band-Rekombination werden bestimmt.

The radiative recombination rate R in silicon at 300°K was measured as a function of the electron and hole concentration n = p at high injection levels. Carriers were injected in a p‐i‐n device, and their concentration was measured by charge extraction. The equation R = B n p = B n2 was verified up to n = 2×1017 cm−3 The radiative recombination probability was found to be B = 1.1 × 10−14 cm3/s.

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