1983
DOI: 10.1016/0038-1101(83)90034-5
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Blocking capability of planar devices with field limiting rings

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Cited by 67 publications
(18 citation statements)
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“…These structures use a larger number of more closely spaced rings than would be expected from an "optimal" design as defined by [33] or [34] to account for the distortion of the depletion regions (recall section 2.3.2), and thus the altered punchthrough voltages, when oxide charge is present.…”
Section: Oxidementioning
confidence: 99%
See 1 more Smart Citation
“…These structures use a larger number of more closely spaced rings than would be expected from an "optimal" design as defined by [33] or [34] to account for the distortion of the depletion regions (recall section 2.3.2), and thus the altered punchthrough voltages, when oxide charge is present.…”
Section: Oxidementioning
confidence: 99%
“…The performance of FLR termination structures is extremely sensitive to the spacing between adjacent rings, and thus precise processing is required to make optimum structures [33]. Optimum spacing for a single FLR termination structure for any device has been given [33], and the optimal spacing for many-ring structures has been solved analytically [34], and this analysis has been extended to punchthrough devices [35]. All of the analytical solutions, however, assume that oxide charge is negligible.…”
Section: Field-limiting Ringsmentioning
confidence: 99%
“…Up to now, several techniques have been proposed for this purpose: planar, such as ''Metal Field Plates" [1], ''Floating Field Rings" [2], JTE [3] and non-planar such as ''bevel" and ''moat" structures [4]. Nevertheless for modern power devices using MOS technology and shallow junctions, the non-planar techniques are not particularly suitable.…”
Section: Introductionmentioning
confidence: 98%
“…These works gave some valuable information to optimize the spacing, as well as to predict the breakdown characteristics [3][4][5][6][7][8][9][10][11]. The numerical techniques, however, not only take much computing time, but also only correspond to the specific cases of the junction depth and the background doping level.…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, the MFFLRs have been widely used in the fabrication of the high power devices. To our knowledge, the published analytical approach to MFFLRs design seriously depends on the choice of some coupling coefficients, such as Brieger's parameter in Brieger's model [5] and Dong-Gun Bae' K values in Dong-Gun Bae' model [13]. They are very cumbersome involving the complex mathematics treatments and the iterative solution.…”
Section: Introductionmentioning
confidence: 99%