Temperature dependence of the Raman spectrum in Ge1−ySnyand Ge1

Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys

“…14 Consequently, the authors utilized a low penetration depth excitation (514.5 nm), which is not ideal for the detection of Sn-related modes. 14,17 Herein, the direct growth on Ge alleviates this difficulty and allows the use of a 633 nm laser to excite the alloys leading to an unambiguous identification of vibrational modes in the ternary layers. Thus, it becomes possible to accurately study faint changes in the behavior Raman modes as a function of strain and composition.…”

Features of polarized Raman spectra for homogeneous and non‐homogeneous compressively strained Ge1−ySny alloys

“…In GeSn alloys, most Raman investigations concentrate on the Ge–Ge peak, located slightly below 300 cm −1 . Only a small number of investigations discuss other Ge–Ge modes or the Ge–Sn and Sn–Sn‐like modes present in the spectra from GeSn alloys in the region 350–100 cm −1 . Furthermore, there are some discrepancies in the results reported in some of these papers.…”

“…These relate to the wavenumber dependence of the main Ge–Ge Raman mode versus the Sn content for strained and relaxed layers. In addition, although the Sn–Sn and other types of Ge–Ge modes are more pronounced in polarized Raman spectra, only a limited number of papers have been published to date where investigations using polarized light are undertaken. In all of these papers except one, the data were taken in one polarized geometry only.…”

Effect of different loss mechanisms in SiGeSn based mid-infrared laser

“…As a result, the binary crystalline alloy Ge z Sn 1 -z has received an extensive coverage in the scientific literature. But the ternary alloy Si x Ge 1 -x -y Sn y is a more thermodynamically stable material than binary [15] and it offers a wider range of device possibilities [16][17][18][19].…”