Temperature dependence of the refractive indices in semiconductors

Bogdanov, V. B.; Pikhtin, A. N.; Prokopenko, V. T.; Yaskov, A. D.

doi:10.1007/bf00665719

Cited by 2 publications

(2 citation statements)

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“…The temperature dependence of the band gap can be calculated using the formula of Varshni [15], for example, or, for a better fit over a wider temperature range an expression by O'Donnell and Chen [16] with fits to experimental data for (Al)GaInP by Smowton and Blood [17]. Calculations of the temperature dependence of the refractive index of semiconductors, mainly binaries, have been made by various workers [18][19][20][21][22]. Specific attention was paid to the (Al)GaInP system by Meney et al [23] who extended the refractive index results of Moser et al…”

Section: Design Of Waveguide Structurementioning

confidence: 99%

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Manufacturing‐tolerant compact red‐emitting laser diode designs for next generation applications

Elliott

Smowton

2015

IET Optoelectronics

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Quantum well laser diodes with low far-field divergence remain a requirement for many applications such as optical interconnects and data networks, pump sources and next generation holographic red-green-blue displays requiring compact, high power, visible light sources with high spatial and spectral coherence. Many designs exist, but the structure must be easy to grow reproducibly, which has commercial advantages. The authors' low far-field divergence design widens the vertical mode in such a way as to decrease the far-field divergence without significantly reducing the confinement factor, thus keeping threshold current lower. In this study, the authors calculate the sensitivity of their design, which has high refractive index mode expansion layers inserted in the cladding, to unintentional variations in layer thickness and composition during growth. They obtain consistency in measured far-fields for three wafers grown over an interval of a year, with a full-width-half-maximum vertical far-field divergence of 17°for a narrow design (Design A) and just under 13°for a very narrow design (Design B). They have demonstrated a useful, reproducible design, adding to the range of versatile semiconductor lasers available for every application.

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Section: Design Of Waveguide Structurementioning

confidence: 99%

“…Calculations of the temperature dependence of the refractive index of semiconductors, mainly binaries, have been made by various workers [18][19][20][21][22]. Specific attention was paid to the (Al)GaInP system by Meney et al [23] who extended the refractive index results of Moser et al [13] over a range of temperatures.…”

Section: Introductionmentioning

confidence: 97%