Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field

Mertes, K. M.; Zheng, Hairong; Vitkalov, Sergey; Sarachik, M. P.; Klapwijk, T. M.

doi:10.1103/physrevb.63.041101

Cited by 30 publications

(6 citation statements)

References 20 publications

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“…(4) and (6), which assumes that the field-independent γ = 0, and the extra decay of the MO amplitude is negligible. This approach, however, would leave unexplained the data at higher B ⊥ fields and in the vicinity of nodes.…”

Section: F Unexpected Resultsmentioning

confidence: 99%

“…In what follows, we will use these known parameters and Eqs. (6) and (4) to find the effective T * D (T ,B ⊥ ,B ) from the measured oscillation amplitude at various T , B ⊥ , and B . The values of T * D↓↑ for individual subbands will be compared with each other, whereas the averaged value T * D will be compared with theoretical predictions.…”

Section: Theory Of Sdh Oscillations In the Interacting 2d Fermi mentioning

confidence: 99%

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Probing electron interactions in a two-dimensional system by quantum magneto-oscillations

2014

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We have experimentally studied the renormalized effective mass m * and Dingle temperature T D in two spin subbands with essentially different electron populations. Firstly, we found that the product m * T D that determines the damping of quantum oscillations, to the first approximation, is the same in the majority and minority subbands even at a spin polarization degree as high as 66%. This result confirms the theoretical predictions that the interaction takes place at high energies ∼E F rather than within a narrow strip of energies E F ± k B T . Secondly, to the next approximation, we revealed a difference in the damping factor of the two spin subbands, which causes skewness of the oscillation line shape. In the absence of the in-plane magnetic field B , the damping factor m * T D is systematically smaller in the spin-majority subband. The difference, quantified with the skew factor γ = (T D↓ − T D↑ )/2T D0 can be as large as 20%. The skew factor tends to decrease as B or temperature grow, or B ⊥ decreases; for low electron densities and high in-plane fields, the skew factor even changes sign. Finally, we compared the temperature and magnetic field dependencies of the magneto-oscillation amplitude with predictions of the interaction correction theory, and found, besides some qualitative similarities, several quantitative and qualitative differences. To explain qualitatively our results, we suggested an empirical model that assumes the existence of easily magnetized triplet scatterers on the Si/SiO 2 interface.

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Section: F Unexpected Resultsmentioning

confidence: 99%

Section: Theory Of Sdh Oscillations In the Interacting 2d Fermi mentioning

confidence: 99%

Probing electron interactions in a two-dimensional system by quantum magneto-oscillations

2014

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“…This rules out explanations which predict qualitatively similar behaviour of the resistance regardless of the degree of spin polarization. In particular, the explanation of the metallic behaviour suggested by Das Sarma and Hwang (1999) (see also Lilly et al (2003)), based on the temperature-dependent screening, predicts metallic-like ρ(T ) for both spin-polarized and unpolarized states, which is in disagreement with experiment (for more on this discrepancy, see Mertes et al (2001)).…”

Section: Resistance In a Parallel Magnetic Fieldmentioning

confidence: 93%

“…Over and above the very large magnetoresistance induced by in-plane magnetic fields, an even more important effect of a parallel field is that it causes the zero-field two-dimensional metal to become an insulator (Simonian et al 1997b, Mertes et al 2001, Shashkin et al 2001b, Gao et al 2002. Figure 14 shows how the temperature dependence of the resistance changes as the magnetic field is increased.…”

Section: Resistance In a Parallel Magnetic Fieldmentioning

confidence: 99%

Metal–insulator transition in two-dimensional electron systems

Kravchenko¹,

Sarachik²

2003

Rep. Prog. Phys.

437

459

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The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly interacting electrons, the ever-present randomness causes the resistance to rise as the temperature is decreased, leading to an insulating ground state. However, new evidence has emerged within the past decade indicating a transition from insulating to metallic phase in two-dimensional systems of strongly interacting electrons. We review earlier experiments that demonstrate the unexpected presence of a metallic phase in two dimensions, and present an overview of recent experiments with emphasis on the anomalous magnetic properties that have been observed in the vicinity of the transition.

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“…Over and above the very large magnetoresistance induced by an in-plane magnetic fields, an even more important effect of a parallel field is that it causes the zero-field 2D metal to become an insulator. 18,[45][46][47][48] The extreme sensitivity to parallel field is illustrated in Fig. 1.4.…”

Section: The Effect Of a Magnetic Fieldmentioning

confidence: 99%

A Metal–insulator Transition in 2d: Established Facts and Open Questions

Кравченко¹,

Sarachik²

2010

50 Years of Anderson Localization

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The discovery of a metallic state and a metal-insulator transition (MIT) in two-dimensional (2D) electron systems challenges one of the most influential paradigms of modern mesoscopic physics, namely, that "there is no true metallic behavior in two dimensions". However, this conclusion was drawn for systems of noninteracting or weakly interacting carriers, while in all 2D systems exhibiting the metal-insulator transition, the interaction energy greatly exceeds all other energy scales. We review the main experimental findings and show that, although significant progress has been achieved in our understanding of the MIT in 2D, many open questions remain.In 2D electron systems, the electrons move in a plane in the presence of a weak random potential. According to the scaling theory of localization of Abrahams et al., 1 these systems lie on the boundary between high and low dimensions insofar as the metal-insulator transition is concerned. The carriers are always strongly localized in one dimension, while in three dimensions, the electronic states can be either localized or extended. In the case of two dimensions the electrons may conduct well at room temperature, but a weak logarithmic increase of the resistance is expected as the temperature is reduced. This is due to the fact that, when scattered from impurities back to their starting point, electron waves interfere constructively with their time reversed paths. Quantum interference becomes increasingly important as the temperature is reduced and leads to localization of the electrons, albeit on a large length scale; this is generally referred to as "weak localization". Indeed, thin metallic films and many of the two-dimensional electron systems fabricated on semiconductor surfaces display the predicted logarithmic increase of resistivity.

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Temperature dependence of the resistivity of a dilute two-dimensional electron system in high parallel magnetic field

Cited by 30 publications

References 20 publications

Probing electron interactions in a two-dimensional system by quantum magneto-oscillations

Probing electron interactions in a two-dimensional system by quantum magneto-oscillations

Metal–insulator transition in two-dimensional electron systems

A Metal–insulator Transition in 2d: Established Facts and Open Questions

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